Nematodes play a significant role in soil biogeochemical cycling. However, our understanding of their community carbon budget response for a shift in the environmental conditions of natural and planted forests is limited. Therefore, we investigated the nematode community composition, daily carbon used in production and daily carbon budget, environmental variables, and the interaction among trophic groups in the moss, litter and 0–5 cm soil layers of natural subalpine spruce forest and plantations in western Sichuan, China. The result revealed that plantations increased the total nematode daily carbon budget by approximately 52% through the herbivore channel in the 0–5 cm soil layer. The herbivorous nematodes’ daily carbon budget and production in the moss layer of plantations decreased by approximately 60% compared to natural forests. Nematode daily carbon used in production and carbon budget had a strong negative correlation with genus richness. The water content and total carbon was the most important environmental factor that affected the nematode carbon budget and production, respectively. However, the environmental factors indirectly affect the daily carbon budget of herbivore nematodes through omnivore top-down control in subalpine forest ecosystems. Our findings highlight that the planted ecosystems have a certain capacity to maintain abundance, richness, and carbon budget of soil nematode but increase the risk of herbivorous pests.
A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler fabrication process. Devices with as thin as 13‐nm nanosheet GAA channel thickness exhibit excellent electrical characteristics: on/off current ratio of 106 and on‐state drive current of 58 µA/µm. Although the parasitic planar channel component still exists, the device performance is decisively dominated by the GAA channel, and further boosted by the junction‐free bulk conduction mechanism and the self‐aligned RSD structure.
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