Abstract:A novel junctionless gate‐all‐around (GAA) transistor with ultrathin nanosheet GAA channel and self‐aligned raised source/drain (RSD) is successfully designed and fabricated on void embedded silicon on insulator (VESOI) substrate through a much simpler fabrication process. Devices with as thin as 13‐nm nanosheet GAA channel thickness exhibit excellent electrical characteristics: on/off current ratio of 106 and on‐state drive current of 58 µA/µm. Although the parasitic planar channel component still exists, the… Show more
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