Articles you may be interested inLow-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials AIP Advances 4, 087140 (2014); 10.1063/1.4894450 Performance of poly(3-hexylthiophene) organic field-effect transistors on cross-linked poly(4-vinyl phenol) dielectric layer and solvent effects Appl. Phys. Lett. 92, 183302 (2008); 10.1063/1.2918979 Dual input AND gate fabricated from a single channel poly(3-hexylthiophene) thin film field effect transistor J. Appl. Phys. 99, 084504 (2006); 10.1063/1.2188131 Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors Appl. Phys. Lett. 86, 032103 (2005); 10.1063/1.1852089Increased mobility from regioregular poly(3-hexylthiophene) field-effect transistors High dielectric constant (kϭ41) titanium oxide (TiO 2 ) was used as the gate insulator in field-effect transistors ͑FETs͒ with regioregular poly͑3-hexylthiophene͒ ͑RR-P3HT͒ as the electronically active semiconductor. Good FET characteristics were obtained with saturation at low drive voltages ͑ϷϪ2 V͒ and with carrier mobilities of 1.3ϫ10 Ϫ2 cm 2 /V s. Deposition of a thin layer of SiO 2 ͑thicknesses of 3 and 17 nm͒ on top of the TiO 2 ͑97 nm͒ gate insulator resulted in a reduced effective dielectric constant (k eff ϭ31 for 3 nm of SiO 2 and k eff ϭ19 for 17 nm SiO 2 ), but with significant improvement in the FET characteristics; the field-effect mobility increased to 5.4ϫ10 Ϫ2 cm 2 /V s, the on/off ratio increased from 10 2 to 6ϫ10 4 , and the leakage current decreased by a factor of approximately 10 2 . The importance of the thin SiO 2 layer was confirmed using aluminum oxide (Al 2 O 3 ) (kϭ8.4) as the gate insulator in RR-P3HT FETs.
PSS (5.2 eV) hole extraction layer. The modified Cu mesh electrodes show remarkable potential as a substitute of ITO/PET in the flexible OPV and OLED devices. The OPV cells constructed on our Cu mesh electrodes present a similar power conversion efficiency of 2.04% as those on ITO/PET electrodes. The flexible OLED prototype devices can achieve a brightness of 10 000 cd at an operation voltage of 8 V.
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