With the rapid development of ultra-wideband communications, the design requirements of CMOS radio frequency integrated circuits have become increasingly high. Ultra-wideband (UWB) low noise amplifiers are a key component of the receiver front end. The paper designs a high power gain (S21) and low noise figure (NF) common gate (CG) CMOS UWB low noise amplifier (LNA) with an operating frequency range between 3.1 GHz and 10.6 GHz. The circuit is designed by TSMC 0.13 μm RF CMOS technology. In order to achieve high gain and flat gain as well as low noise figure, the circuit uses many technologies. To improve the input impedance matching at low frequencies, the circuit uses the proposed T-match input network. To decrease the total dissipation, the circuit employs current reused technique. The circuit uses he noise cancelling technique to decreases the NF. The simulation results show a flat S21>20.81 dB, the reverse isolation (S12) less than-48.929 dB, NF less than 2.617 dB, the minimum noise figure (NFmin)=1.721 dB, the input return loss (S11) and output return loss (S22) are both less than-14.933 dB over the frequency range of 3.1 GHz to 10.6 GHz. The proposed UWB LNA consumes 1.548 mW without buffer from a 1.2 V power supply.
Abstract. In first stage of each microwave receiver there is Low Noise Amplifier (LNA) circuit, and this stage has important rule in quality factor of the receiver. This paper presents the design of LNA and development of low bias (VD=3V, ID=20mA), the LNA operating in frequency range 1.8-2.2GHz using a feedback circuit. Design System (ADS) 2012 tool was used for design and simulation, and each design was tuned to get the optimum value for NF, power gain (S21), input return loss (S11) and reverse isolation (S12). Simulation results have indicated that the S21 achieves 33.2515±0.4475dB over the wide frequency band of 1.8-2.2GHz, the gain was almost flat over the whole band. Noise Figure (NF) maintains is 0.4945 ± 0.0565dB, S12 < -47.089dB and S11 < -16.126 dB in the entire band.
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