Design of a Two Stage Low Noise System in the Frequency Band 1.8-2.2GHz for Wireless System

Zhao, Xiaoli; Fan, Honghui; Ye, Feiyue; Qian, Xiufang; Chen, Dan; He, Sheng

doi:10.14257/ijfgcn.2015.8.3.11

Cited by 1 publication

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“…Our design is based upon a relatively newer generation GaAs Enhancement-mode pseudomorphic High-Electron Mobility Transistor (E-pHEMT/FET), the Avago ATF54143 [15], chosen for a number of important features such as excellent stability (as studies have demonstrated [16] [17]), associated gain of 16.6 dB and very low noise figure of 0.5 dB @ 2 GHz, and low-power consumption (<2 mW), while working at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Low-Noise Amplification, Detection and Spectroscopy of Ultra-Cold Systems in RF Cavities

Bukhari¹,

Shah²

2016

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The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5-4 GHz spectrum of frequencies (the "L" and "S" microwave bands). The design is suitable for weak RF signal detection and spectroscopy from ultra-cold systems confined in cryogenic RF cavities, as entailed in a number of physics, physical chemistry and analytical chemistry applications, such as NMR/NQR/EPR and microwave spectroscopy, Paul traps, Bose-Einstein Condensates (BEC's) and cavity Quantum Electrodynamics (cQED). Using a generic Low-Noise Amplifier (LNA) architecture for a GaAs enhancement mode High-Electron Mobility FET device, our design has especially been devised for scientific applications where ultra-low-noise amplification systems are sought to amplify and detect weak RF signals under various conditions and environments, including cryogenic temperatures, with the least possible noise susceptibility. The amplifier offers a 16 dB gain and a 0.8 dB noise figure at 2.5 GHz, while operating at room temperature, which can improve significantly at low temperatures. Both dc and RF outputs are provided by the amplifier to integrate it in a closed-loop or continuous-wave spectroscopy system or connect it to a variety of instruments, a factor which is lacking in commercial LNA devices. Following the amplification stage, the RF signal detection is carried out with the help of a post-amplifier and detection system based upon a set of Zero-Bias Schottky Barrier Diodes (ZBD's) and a high-precision ultra-low noise jFET operational amplifier. The scheme offers unique benefits of sensitive detection and very-low noise amplification for measuring extremely weak on-resonance signals with substantial lownoise response and excellent stability while eliminating complicated and expensive heterodyne schemes. The LNA stage is fully capable to be a part of low-temperature experiments while being operated in cryogenic conditions down to about 500 mK.

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Section: Introductionmentioning

confidence: 99%

Low-Noise Amplification, Detection and Spectroscopy of Ultra-Cold Systems in RF Cavities

Bukhari¹,

Shah²

2016

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Design of a Two Stage Low Noise System in the Frequency Band 1.8-2.2GHz for Wireless System

Cited by 1 publication

References 0 publications

Low-Noise Amplification, Detection and Spectroscopy of Ultra-Cold Systems in RF Cavities

Low-Noise Amplification, Detection and Spectroscopy of Ultra-Cold Systems in RF Cavities

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