This paper presents a 2-D potential model for the asymmetric double-gate tunnel FET (ADG-TFET) that well considers the source-channel junction depletion region. The model derives a closed and analytical form derived from the 2D Poisson equation by using the conformal mapping technique. Potential function and electric field function are given by appropriate boundary conditions. We use a commercial TCAD simulator to verify the model.
This paper proposes an analytical model for the asymmetric double gate (ADG) TFET. The two-dimensional Poisson equation is solved based on a depletion approximation. The two-dimensional potential function is given by appropriate boundary conditions. Internal electric field is calculated from the potential model and the tunnel current is numerically calculated using Kane's tunnel current generation model. We use a commercial TCAD simulator to examine the analytical model.
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