Abstract:This paper presents a 2-D potential model for the asymmetric double-gate tunnel FET (ADG-TFET) that well considers the source-channel junction depletion region. The model derives a closed and analytical form derived from the 2D Poisson equation by using the conformal mapping technique. Potential function and electric field function are given by appropriate boundary conditions. We use a commercial TCAD simulator to verify the model.
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