High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.Electronic supplementary materialThe online version of this article (10.1186/s11671-017-2329-9) contains supplementary material, which is available to authorized users.

Treatment with oxygen-containing plasma is an essential step for the fabrication of devices containing components of polydimethylsiloxane (PDMS). Such oxidative treatment chemically modifies the surface of PDMS allowing it to permanently adhere to glass, quartz, PDMS and other silica-based substrates. Overexposure of PDMS to oxidative gas plasma, however, compromises its adhesiveness. Therefore, regulation of the duration and the conditions of the plasma treatment is crucial for achieving sufficient surface activation without overoxidation. Using a semiquantitative ternary approach, we evaluated the quality of adhesion ( QA) between flat PDMS and glass substrates pretreated with oxygen plasma under a range of different conditions. The quality of adhesion manifested good correlation trends with the surface properties of the pretreated PDMS. Examination of the QA dependence on the treatment duration and on the pressure and the RF power of the plasma revealed a range of oxidative conditions that allowed for permanent adhesion with quantitative yields.

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Controlled surface oxidation of polydimethylsiloxane (PDMS) is essential for permanent adhesion between device components composed of this elastomer. The permanent adhesion between such microdevice components results from covalent crosslinking across the interfaces between PDMS and other silica-based materials, such as glass, quartz, and PDMS. Optimal duration and conditions of oxidation, attained via treatments with oxygen-containing plasma, are crucial for microfabrication procedures with quantitative yields. While insufficient PDMS oxidation does not provide high enough surface density of siloxyl groups for cross-interface linking, overoxidation of PDMS yields rough silica surface layers that prevent the adhesion between flat substrates. Ideally, for a set of plasma conditions, the range of treatment durations producing permanent adhesion should be as broad as possible: i.e., the surface oxidation of PDMS sufficient for irreversible binding has to complete significantly before the effects of overoxidation become apparent. Such a requirement assures that relatively small fluctuations in the treatment conditions will not result in over-or under-oxidation and, hence, will not compromise the yields of the fabrication procedures. We examined the dependence of the quality of adhesion (QA) between plasma-treated PDMS and glass substrates on the composition of the oxygen-containing plasma and on the radio frequency (RF) of the plasma generator. We observed that plasma generated at megahertz RF provided superior conditions than kilohertz RF. Concurrently, an increase in the oxygen content of binary gas mixtures, used for the plasma, broadened the treatment durations that afford superior QA.

Low-dimensional lead-free organic–inorganic hybrid perovskites have gained increasing attention as having low toxicity, ease of processing, and good optoelectronic properties. Seeking for lead-free and narrow band gap organic–inorganic hybrid perovskites are of great importance for the development and application of photoelectric materials. Here, we reported a Sb-based organic–inorganic hybrid perovskite (MV)­[SbI3Cl2], which has one-dimensional inorganic frameworks of the I-sharing double octahedra. (MV)­[SbI3Cl2] shows a narrow direct band gap of 1.5 eV, and displays obvious photoresponse for the 532 nm light with rapid response speed of t rise = 0.69 s, t decay = 0.28 s. With an illumination power of 5 mW and a 50 V bias, the responsivities (R) and external quantum efficiency (EQE) for (MV)­[SbI3Cl2] photodetector under 532 nm laser are 29.75 mA/W and 6.69% respectively. This Sb-based halide double perovskite material will provide an alternative material for photodetector devices.

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore deionized (DI) water as a solution top-gate for field-effect switching of layered semiconductors including SnS, MoS, and black phosphorus. The DI water gate is easily fabricated, can sustain rapid bias changes, and its efficient coupling to layered materials provides high on-off current ratios, near-ideal subthreshold swing, and enhanced short-channel behavior even for FETs with thick, bulk-like channels, where such  control is difficult to realize with conventional back gating. Screening by the high-k solution gate eliminates hysteresis due to surface and interface trap states and substantially enhances the field-effect mobility. The onset of water electrolysis sets the ultimate limit to DI water gating at large negative gate bias. Measurements in this regime show promise for aqueous sensing, demonstrated here by the amperometric detection of glucose in aqueous solution. DI water gating of layered semiconductors can be harnessed in research on novel materials and devices, and it may with further development find broad applications in microelectronics and sensing.

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