We have developed a carbon nanostructure, which is comprised of high-density carbon nanotips on a graphite layer. These carbon nanotips, with tip diameters of ∼10 nm, are grown by high-density plasma chemical vapor deposition onto Ni-coated Si using an inductively coupled plasma. The Ni on Si changes into NiSi2 by substrate heating. First, a carbon buffer layer and then a graphene sheet are formed on the NiSi2. Then, the carbon nanotips are grown by a C2H2/H2 plasma on the graphene sheet. The carbon nanotips show good adhesion to the substrate and are almost aligned, with an average length of 110 nm. They exhibit a turn-on field of 0.1 V/μm, a field amplification factor of ∼13 000, a current density of 2 mA/cm2 at a field of 2 V/μm, and uniform electron emission.

We have developed a low temperature carbon nanotube (LT‐CNT) growing process that can be used for electron emitter of field emission display (FED). Using this process technology, we successfully demonstrated a 5.4 inch LT‐CNT FED using conventional 0.7 mm glass substrate without any distortion due to the thermal shrinkage of the glass substrate.

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The high density carbon nanotips were grown on the Si by high-density plasma chemical vapor deposition with inductively coupled plasma. The tips have 5~10 nm radius with ~100nm length. The highbrightness FED lamps of > 32,000 cd/m 2 made of carbon nanotip emitter were demonstrated in this work.

We developed self-organized carbon nano-tips using a high density plasma CVD. A C 2 H 2 /H 2 mixture was used as source gas for the deposition. The carbon nano-tips showed good adhesion to the substrate and exhibited a turn-on field as low as 0.1 V/µm and uniform light emission from a phosphor screen.