We have developed a low temperature carbon nanotube (LT‐CNT) growing process that can be used for electron emitter of field emission display (FED). Using this process technology, we successfully demonstrated a 5.4 inch LT‐CNT FED using conventional 0.7 mm glass substrate without any distortion due to the thermal shrinkage of the glass substrate.
Recently carbon nanotubes have been applied for the electron emitter of field emission display device as one of strong application candidates. In a mean time, we successfully demonstrated color motion picture with the Low Temperature Carbon Nanotube Field Emission Display (LT-CNT FED) in last time. And continuously we have been working on improving the brightness of it and could get much bright color motion picture recently. For improving the brightness, we investigated the CNT growing conditions, aspect ratio of emission hole design and CNT Cathode structures. From these efforts, 5.4 inches LT-CNT FED demonstrated the brightness 136nits with the anode voltage 4.7V/µm.
We report the synthesis of a cone-shaped bundle composed of carbon nanotubes (CNTs) in the gate holes by a multi-step growing method: (1) growth of carbon nanotubes in the gate hole; (2) etching the grown CNTs by in situ plasma treatment; (3) regrowth of CNTs. The new CNT bundle in the gate holes exhibited a turn-on gate voltage of 23.5V, an anode current density of 0.034mA∕cm2 at the gate voltage of 30V, and a transconductance of 2.05×10−4S; these are about 50% enhancement compared to conventional CNTs. The field emitter array with the Spindt-type CNTs in the gate holes shows uniform light emission.
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