In the study of electroless Ni plating of Si wafers with p‐n junctions using conventional solutions, a pronounced difference in plating rate between p‐ and n‐type surfaces is observed. Further experiments show that rate difference probably should not only be attributed to the photovoltaic effect generated at the p‐n junctions but also to the electronegativity difference between p‐ and n‐type Si. The latter effect can be changed by addition of such material as
NH4SCN
or
2NH4‐EDTA
to the plating solution. Whereas
SCN−
addition increases the rate difference, EDTA addition decreases it. This fact which can be put to practical use gives an extra support for the explanation given above.
The electric resistance of electroless nickel contacts to p-type silicon is investigated. The contact resistance increases by a factor of 100 when the resistivity of substrate silicon increases 10 times. It is also found that the contact resistance greatly increases on increasing the heat treatment temperature except for an intermediate temperature range between 450 ~ and 600~ The x-ray and chemical analyses show that the heat treatment at high temperatures causes a sharp increase in content of the nickel silicide phase accompanied by a decrease in the nickel phase. The observed change in contact resistance due to heat treatment is discussed in relation to the chemical transformations in the nickel-silicon-phosphorus system. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 152.14.136.77 Downloaded on 2015-03-14 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 152.14.136.77 Downloaded on 2015-03-14 to IP
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