In the study of electroless Ni plating of Si wafers with p‐n junctions using conventional solutions, a pronounced difference in plating rate between p‐ and n‐type surfaces is observed. Further experiments show that rate difference probably should not only be attributed to the photovoltaic effect generated at the p‐n junctions but also to the electronegativity difference between p‐ and n‐type Si. The latter effect can be changed by addition of such material as
NH4SCN
or
2NH4‐EDTA
to the plating solution. Whereas
SCN−
addition increases the rate difference, EDTA addition decreases it. This fact which can be put to practical use gives an extra support for the explanation given above.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.