We have developed Schottky barrier photodiodes of AlN, AlxGa1−xN, GaN and InyGa1−yN grown on n-SiC. Spectral responsivity measurements demonstrate that the devices fabricated have sharp cut-offs with a rejection ratio of over 3 decades and the cut-off wavelength can be varied by changing the alloy or the composition of the alloys. The internal quantum efficiency of an Al0.19Ga0.81N photodiode is estimated to reach 64% around 300 nm. It is also confirmed that the photodiodes do not notably degrade in responsivity to the UV radiant exposure of 5 kJ cm−2 in contrast to Si photodiodes. Characterization on uniformity, temperature dependence and angular response is also conducted and gives satisfactory results for all items. In conclusion, the Schottky barrier photodiodes of AlN, AlxGa1−xN, GaN and InyGa1−yN work properly as expected and look very promising for precise measurements in the VUV and UV regions.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.