UV/VUV photodetectors using group III‐nitride semiconductors

Saito, T.; Hitora, Toshimi; Hitora, Hisako; Kawai, H.; Yamaguchi, Eiichi

doi:10.1002/pssc.200880876

Cited by 11 publications

(7 citation statements)

References 12 publications

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“…Their spectral responsivity can be tailored for specific applications by bandgap engineering of the Al x Ga 1-x N layers and in-situ integration of filter layers during Manuscript the epitaxial growth process. Results in the field of Al x Ga 1-x N photodetectors can be found in the literature [1]- [5]. Several results focused on small area pixels of less than 0.03 mm² are published by several groups [6]- [10].…”

Section: Introductionmentioning

confidence: 99%

Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation

Albrecht

Kopta

John

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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Improved Aluminum-Gallium-Nitride p-i-n photodetectors with different active regions are reported, designed for the measurement of UV-A (315 to 380 nm), UV-B (280 to 315 nm), and UV-C (< 280 nm) radiation. The spectral responsivity of Al x Ga 1-x N photodetectors can be tailored by bandgap engineering of the Al x Ga 1-x N layers and integration of filter layers. Intrinsically visible-blind p-i-n photodetectors are measured on-wafer and packaged in TO-18 headers. Photocurrent measurements in photovoltaic mode result in responsivity values of up to 0.21 A/W for UV-A (EQE = 70 %), 0.14 A/W for UV-B (EQE = 56 %), and 0.11 A/W for UV-C (EQE = 57 %), respectively. Room temperature dark current density values as low as 30 pA/cm² at a reverse bias of -3 V yield a specific detectivity of more than 4×10 14 cmHz 0.5 /W. Response time data of the p-i-n photodiodes indicate a rise time of 1.7 ns and a fall time (1/e) of 4.5 ns. Long term stability tests over 1000 h at an irradiance of 5 W/cm² demonstrate the potential of these photodetectors for demanding applications such as the continuous monitoring of high irradiance ultraviolet light sources. Index Terms-Aluminum gallium nitride, p-i-n diodes, Semiconductor epitaxial layers, Ultraviolet photodetectors. 1077-260X (c)

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Section: Introductionmentioning

confidence: 99%

Improved AlGaN p-i-n Photodetectors for Monitoring of Ultraviolet Radiation

Albrecht

Kopta

John

et al. 2014

IEEE J. Select. Topics Quantum Electron.

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“…Let us mention, for example, the problem of the cBN doping, which needs further investigation. The spectral window of such new detectors, as presented by Saito et al (2009), is also extremely temperature-dependent. Finally, we are still lacking a complete end-to-end test of their degradation.…”

Section: Resultsmentioning

confidence: 99%

“…For the MUV range, we consider a new detector architecture that selects the required passbands by using different materials: aluminium nitride (AlN) and gallium nitride (GaN) with a different stoichiometry (Saito et al 2009). Because of the particular architecture, no additional windows on the detectors need to be considered for limiting the short wavelength contribution.…”

Section: Which Instrument For the Future?mentioning

confidence: 99%

New observation strategies for the solar UV spectral irradiance

Cessateur

Lilensten

Wit

et al. 2012

J. Space Weather Space Clim.

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Many applications in space weather and in space situational awareness require continuous solar spectral irradiance measurements in the UV, and to a lesser degree in the visible band. Most space-borne solar radiometers are made out of two different parts: (i) a front filter that selects the passband and (ii) a detector that is usually based on silicon technology. Both are prone to degradation, which may be caused either by the degradation of the filter coating due to local deposition or to structural changes, or by the degradation of the silicon detector by solar radiative and energetic particle fluxes. In this study, we provide a theoretical analysis of the filter degradation that is caused by structural changes such as pinholes; contamination-induced degradation will not be considered. We then propose a new instrumental concept, which is expected to overcome, at least partially, these problems. We show how most of the solar UV spectrum can be reconstructed from the measurement of only five spectral bands. This instrumental concept outperforms present spectrometers in terms of degradation. This new concept in addition overcomes the need for silicon-based detectors, which are replaced by wide band gap material detectors. Front filters, which can contribute to in-flight degradation, therefore are not required, except for the extreme-UV (EUV) range. With a small weight and a low telemetry, this concept may also have applications in solar physics, in astrophysics and in planetology.

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“…A number of developments for better stability and solar-blindness have been reported by using various kind of wide bandgap materials like diamond (Saito, T. et al, 2005a;Saito, T. et al, 2005b;Saito, T. et al, 2006), AlN, AlGaN, InGaN etc. (Saito, T. et al, 2009a;Saito, T. et al, 2009b). To check the validity of the calculation model described in Chapter 3, a number of comparisons have been conducted in the wide wavelength range from 10 nm to 1000 nm.…”

Section: Spectral Properties Of Photodiodesmentioning

confidence: 99%