We investigated electrical properties of titanyl-phthalocyanine ͑TiOPc͒ films under ultrahigh vacuum ͑UHV͒ conditions to avoid the influence of gas adsorption. The field-effect measurement revealed that TiOPc films exhibited an n-type semiconducting behavior in UHV. The electron mobility at room temperature was 9ϫ10 Ϫ6 cm 2 V Ϫ1 s Ϫ1 with activation energy of 0.20 eV. The conductivity and carrier density were 9ϫ10 Ϫ8 S cm Ϫ1 and 6ϫ10 16 cm Ϫ3 , respectively. A clear conversion from n-type to p-type behavior was observed when the film was exposed to oxygen. Strict control of atmosphere made it possible to obtain a quasi-intrinsic state where both p-and n-type conductions appeared simultaneously.

The electron mobility of hexadecafluorophthalocyaninato-copper ( F 16 PcCu ) films was evaluated based on field effect measurements in vacuum and in various gas atmospheres. An Arrhenius plot of the mobility showed that the carrier transport followed a thermally activated hopping mechanism with an activation energy of 0.28 eV. The mobility evaluated for freshly prepared films in ultrahigh vacuum was 2.0 × 10−3 cm 2 V −1 s −1 at room temperature. The electrical conductivity and carrier density were 4.4 × 10−5 S cm −1 and 1.4 × 1017 cm −3 respectively. The high carrier density indicated the existence of impurities acting as electron donors in the films. The field effect carrier mobility increased to 5.7 × 10−3 cm 2 V −1 s −1 in NH 3 atmosphere (100%, 1 atm) and decreased by 75% in the presence of O 2 gas (100%, 1 atm). A quick recovery of mobility was observed when the gas molecules were evacuated, indicating a low capability of gas adsorption.

No abstract

No abstract

A new advanced e-beam reticle writing system HL-950M has been developed to meet requirements for the production of 130 nm node reticles as well as the development of 100 nm node reticles. In order to improve the critical dimension (CD) accuracy and pattern positioning accuracy, several new technologies have been introduced. Fine address size is realized by a newly developed control electronics that enables the system to handle address unit of 2.5 nm, providing four times higher resolution than that of the previous systems. Reconstruction of sub-sub-field (SSF) pattern data has been developed so that the same pattern is exposed twice with reconstructed SSF pattern data sets with different SSF boundaries, realizing better stitching and positioning accuracy. High accuracy proximity effect correction has been developed with a new second order proximity effect calculation scheme, particularly promising better CD linearity.As main results of the system evaluation, the global CD accuracy of 9 nm (3σ) and the global pattern positioning accuracy of 15 nm (3σ) have been obtained. The overall performance of the HL-950M system has satisfied the specifications required for the 130 nm node reticle production and 100nm node reticle development.