The novel technique for the preparation of crystalline Si thin films termed “Spontaneous Chemical Deposition” has been proposed, in which silane decomposes spontaneously by gas phase reactions with fluorine at reduced pressure. The technique provided us the crystalline films in a wide range of the preparation conditions by a choice of the external parameters for the reactions. The films exhibited unique characteristics in the chemical structure and the optical and electrical properties, different from the conventional uc-Si:H thin films by the silane plasma processes.The technique have been successfully applied for the homoepitaxial growth of Si thin films.
The mechanism for the hydrogen abstraction (ABS) reaction at the D 2 O covered Ru(001) surface was investigated. HD desorption rates were measured at D2O 3 ML. The apparent reaction order of HD desorption was approximately 1.7, which is almost equal to the value of 1:6 AE 0:1 measured on clean Ru(001) surfaces. The HD desorption rates were analyzed using the same equation previously proposed for the clean Ru surface, which consists of three rate terms due to the hot atom (HA), hot complex (HC) and Langmuir-Hinshelwood (LH) mechanisms. The surface area enclosed by the hexagonal ring structure of the first water layer is sufficiently large to assure complete energy relaxation of excess H atoms from the hot atom states at which HA-mediated ABS occurs to the supersaturation coverage of thermodynamically unstable adatoms, which results in ABS by the LH mechanism. #
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