Ultra-Shallow and Abrupt Boron Profiles in Si by δ-Doping Technique

Abstract

The mechanism for the hydrogen abstraction (ABS) reaction at the D 2 O covered Ru(001) surface was investigated. HD desorption rates were measured at D2O 3 ML. The apparent reaction order of HD desorption was approximately 1.7, which is almost equal to the value of 1:6 AE 0:1 measured on clean Ru(001) surfaces. The HD desorption rates were analyzed using the same equation previously proposed for the clean Ru surface, which consists of three rate terms due to the hot atom (HA), hot complex (HC) and Langmuir-Hinshelwood (LH) mechanisms. The surface area enclosed by the hexagonal ring structure of the first water layer is sufficiently large to assure complete energy relaxation of excess H atoms from the hot atom states at which HA-mediated ABS occurs to the supersaturation coverage of thermodynamically unstable adatoms, which results in ABS by the LH mechanism. #

Rigorous hole band structure calculations of p-type δ-doping superlattices in silicon

“…δ-FETs [1]. Several experimental investigations of the confined hole gas in p-type δ-doped layers in Si have been realized recently by using different techniques [2][3][4][5][6]. While the energy band structures of n-type δ-doping quantum wells and superlattices (SLs) in Si are well known from self-consistent envelope function calculations using realistic bulk band structures [7], no such calculations exist for the p-type δ-doping layers.…”