The trapping of charge carriers at defects on surfaces or grain boundaries is detrimental for the performance of perovskite solar cells (PSCs). For example, it is the main limiting factor for carrier lifetime. Moreover, it causes hysteresis in the current-voltage curves, which is considered to be a serious issue for PSCs' operation. In this work, types of surface defects responsible for carrier trapping are clarified by a comprehensive first-principles investigation into surface defects of tetragonal CHNHPbI (MAPbI). Considering defect formation energetics, it is proposed that a Pb-rich condition is preferred to an I-rich one; however, a moderate condition might possibly be the best choice. Our result paves the way for improving the performance of PSCs through a rational strategy of suppressing carrier trapping at surface defects.
Hopping-type charge transport in an amorphous thin layer composed of organic molecules is simulated by the combined use of molecular dynamics, quantum chemical, and Monte Carlo calculations. By explicitly considering the molecular structure and the disordered intermolecular packing, we reasonably reproduce the experimental hole and electron mobilities and their applied electric field dependence (Poole–Frenkel behaviour) without using any adjustable parameters. We find that the distribution of the density-of-states originating from the amorphous nature has a significant impact on both the mobilities and Poole–Frenkel behaviour. Detailed analysis is also provided to reveal the molecular-level origin of the charge transport, including the origin of Poole–Frenkel behaviour.
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