The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU) and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs are explored. Above the threshold LET for direct ionization-induced upsets, little difference is observed in single-event upset and latchup cross sections measured using low versus high energy heavy ions. However, significant differences between lowand high-energy heavy ion test results are observed below the threshold LET for single-node direct ionization-induced upsets. The data suggest that secondary particles produced by nuclear interactions play a role in determining the SEU and SEL hardness of integrated circuits, especially at low LET. The role of nuclear interactions and implications for radiation hardness assurance and rate prediction are discussed.

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The prototype of a solid propellant rocket array thruster for simple attitude control of a 10 kg class micro-spacecraft was completed and tested. The prototype has 10 × 10 φ0.8 mm solid propellant micro-rockets arrayed at a pitch of 1.2 mm on a 20×22 mm substrate. To realize such a dense array of micro-rockets, each ignition heater is powered from the backside of the thruster through an electrical feedthrough which passes along a propellant cylinder wall. Boron/potassium nitrate propellant (NAB) is used with/without lead rhodanide/potassium chlorate/nitrocellulose ignition aid (RK). Impulse thrust was measured by a pendulum method in air. Ignition required electric power of at least 3-4 W with RK and 4-6 W without RK. Measured impulse thrusts were from 2 × 10 −5 Ns to 3 × 10 −4 Ns after the calculation of compensation for air dumping.

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