PSCs have two typical configurations, regular (n-i-p) and inverted (p-i-n). So far, the highest reported efficiencies of PSCs have been achieved using the n-i-p configuration with a mesoporous scaffold such as, a TiO 2 layer. [11] The mesoporous n-i-p structure usually requires a high temperature thermal treatment, exhibits severe hysteresis behavior and photo-induced degradation. The planar p-i-n architecture, which has no mesoporous scaffold, has attracted growing attention because it offers low temperature fabrication, much less pronounced hysteresis [12] and high stability with no need for dopants in the charge selective layer, which are known to cause degradation. [13] The p-i-n PSCs have also shown superior compatibility in perovskite based tandem solar cells due to lower parasitic absorption loss in the front contact. [14][15][16] Nevertheless, the maximum PCE of p-i-n PSCs still lags behind that of their n-i-p counterparts. This is predominantly the results of lower open circuit voltage and higher non-radiative recombination losses. [17] These losses are dominated by the interfaces of the charge-selective contacts. Extensive efforts have been devoted to improving these interfacial properties. For instance, approaches using ultrathin but conformal organic Recent advances in perovskite solar cells (PSCs) performance have been closely related to improved interfacial engineering and charge selective contacts. Here, a novel and cost-competitive phenothiazine based, self-assembled monolayer (SAM) as a hole-selective contact for p-i-n PSCs is introduced. The molecularly tailored SAM enables an energetically well-aligned interface with the perovskite absorber, with minimized nonradiative interfacial recombination loss, thus dramatically improving charge extraction/transport and device performance. The resulting PSCs exhibit a power conversion efficiency (PCE) of up to 22.44% (certified 21.81%) with an average fill factor close to 81%, which is among the highest efficiencies reported to date for p-i-n PSCs. The new SAM also demonstrates the outstanding operational stability of the PSC, with increasing PCE from 20.3% to 21.8% during continuous maximum power point tracking under a simulated 1 sun illumination for 100 h. The reported findings highlight the great potential of engineered SAMs for the fabrication of stable and high performing PSCs.

Inverted type perovskite solar cells (PSCs) have recently emerged as a major focus in academic and industrial photovoltaic research. Their multiple advantages over conventional PSCs include easy processing, hysteresis‐free behavior, high stability, and compatibility for tandem applications. However, the maximum power conversion efficiency (PCE) of inverted PSCs still lags behind those of conventional PSCs because suitable charge‐selective materials for inverted PSCs are limited. In this study, excellent hole‐selective materials for inverted PSCs are introduced. A series of tricyclic aromatic rings containing O, S, or Se, respectively, as a core heteroatom, along with a phosphonic acid anchor, form a self‐assembled monolayer (SAM) that directly contacts the perovskite absorber. The influence of heteroatoms in the aromatic structure on the molecular energetics and operating characteristics of the corresponding inverted PSCs is investigated using complementary experimental techniques as well as density functional theory (DFT) calculations. It is found that all of the SAMs formed an energetically well‐aligned interface with the perovskite absorber. The interaction energy between the Se‐containing SAM and perovskite absorber is the strongest among the series and it reduces the interfacial defect density, in turn leading to an extended charge carrier lifetime. As a result, PSCs incorporating the Se‐containing SAM achieves a PCE of 22.73% and retains ≈96% of their initial efficiency after a maximum power point tracking test of 500 h without encapsulation under ambient conditions. All of the SAMs are then employed in organic solar cells (OSCs). Again, the Se‐containing SAM‐based OSCs demonstrates the highest PCE of 17.9% among the three molecular SAM‐based OSCs. This study demonstrates the great potential for precisely engineered SAMs for use in high‐performance solar cells.

We report high-performance top-gate bottom-contact flexible polymer field-effect transistors (FETs) fabricated by flow-coating diketopyrrolopyrrole (DPP)-based and naphthalene diimide (NDI)-based polymers (P(DPP2DT-T2), P(DPP2DT-TT), P(DPP2DT-DTT), P(NDI2OD-T2), P(NDI2OD-F2T2), and P(NDI2OD-Se2)) as semiconducting channel materials. All of the polymers displayed good FET characteristics with on/off current ratios exceeding 10. The highest hole mobility of 1.51 cm V s and the highest electron mobility of 0.85 cm V s were obtained from the P(DPP2DT-T2) and P(NDI2OD-Se2) polymer FETs, respectively. The impacts of the polymer structures on the FET performance are well-explained by the interplay between the crystallinity, the tendency of the polymer backbone to adopt an edge-on orientation, and the interconnectivity of polymer fibrils in the film state. Additionally, we demonstrated that all of the flexible polymer-based FETs were highly resistant to tensile stress, with negligible changes in their carrier mobilities and on/off ratios after a bending test. Conclusively, these high-performance, flexible, and durable FETs demonstrate the potential of semiconducting conjugated polymers for use in flexible electronic applications.

We report synthesis of a new poly(4-(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- b:4,5- b']dithiophene-2-yl)-7-(4,4-bis(2-ethylhexyl)-6-(selenophene-2-yl)-4 H-silolo[3,2- b:4,5- b']dithiophene-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole (PDFDSe) polymer based on planar 4,7-bis(4,4-bis(2-ethylhexyl)-4 H-silolo[3,2- b:4,5- b']dithiophen-2-yl)-5,6-difluorobenzo[ c][1,2,5]thiadiazole (DFD) moieties and selenophene linkages. The planar backboned PDFDSe polymer exhibits highest occupied molecular orbital and lowest unoccupied molecular orbital levels of -5.13 and -3.56 eV, respectively, and generates well-packed highly crystalline states in films with exclusive edge-on orientations. PDFDSe thin film was incorporated as a channel material in top-gate bottom-contact organic thin-film transistor with a solid-state electrolyte gate insulator (SEGI) composed of poly(vinylidene difluoride-trifluoroethylene)/poly(vinylidene fluoride- co-hexafluroropropylene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, which exhibited a remarkably high hole mobility up to μ = 20.3 cm V s corresponding to effective hole mobility exceeding 5 cm V s and a very low threshold voltage of -1 V. These device characteristics are associated with the high carrier density in the semiconducting channel region, induced by the high capacitance of the SEGI layer. The excellent carrier mobility from the PDFDSe/SEGI device demonstrates a great potential of semiconducting polymer thin-film transistors as electronic components in future electronic applications.

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High carrier mobilities have recently been achieved in polymer field effect transistors (FETs). However, many of these polymer FET devices require the use of chlorinated solvents such as chloroform (CF), chlorobenzene (CB), and o-dichlorobenzene (DCB) during fabrication. The use of these solvents is highly restricted in industry because of health and environmental issues. Here, we report the synthesis of a low band gap (1.43 eV, 870 nm) semiconducting polymer (PDPP2DT-F2T2) having a planar geometry, which can be readily processable with nonchlorinated solvents such as toluene (TOL), o-xylene (XY), and 1,2,4-trimethylbenzene (TMB). We performed structural characterization of PDPP2DT-F2T2 films prepared from different solvents, and the electrical properties of the films were measured in the context of FETs. The devices exhibited an ambipolar behavior with hole dominant transport. Hole mobilities increased with increasing boiling point (bp) of the nonchlorinated solvents: 0.03, 0.05, and 0.10 cm V s for devices processed using TOL, XY, and TMB, respectively. Thermal annealing further improved the FET performance. TMB-based polymer FETs annealed at 200 °C yielded a maximum hole mobility of 1.28 cm V s, which is far higher than the 0.43 cm V s obtained from the CF-based device. This enhancement was attributed to increased interchain interactions as well as improved long-range interconnection between fibrous domains. Moreover, all of the nonchlorinated solutions generated purely edge-on orientations of the polymer chains, which is highly beneficial for carrier transport in FET devices. Furthermore, we fabricated an array of flexible TMB-processed PDPP2DT-F2T2 FETs on the plastic PEN substrates. These devices demonstrated excellent carrier mobilities and negligible degradation after 300 bending cycles. Overall, we demonstrated that the organized assembly of polymer chains can be achieved by slow drying using high bp nonchlorinated solvents and a post thermal treatment. Furthermore, we showed that polymer FETs processed using high bp nonhalogenated solvents may outperform those processed using halogenated solvents.

Li-metal batteries (LMBs) are regarded as next generation storage devices for applications in a wide range of fields, such as electric vehicles and grid-scale energy storage. Unfortunately, their practical applications...

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