TiB2 films have been prepared by photochemical vapor deposition using a D2 lamp from a TiCl4-BCl3-H2-Ar gas mixture. The deposition temperature of the TiB2 films was lowered 50 °C by irradiation with a D2 lamp as compared to that without irradiation. The deposition rate was increased by 1.5–2.5 times with irradiation.
400 500 600 700 800 Temperature ("C) FiG. 2. Effect of reaction temperature on the thickness of deposit5 obtained from a gas mixture of TiC1 4 -NH 1 -H, . TiCI., flow rate = 0.05 eels, NUl flow rate c= 0.14 eels, H, !low rate =-1.4 eels. Reaction time = Ih. (0)
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