Magnetization switching of a relatively thick (9 nm) Gd-Fe free layer was achieved with a low spin injection current density of 1.0 × 106 A/cm2 using MgO based magnetic tunnel junction devices, fabricated for light modulators. At about 560 × 560 nm2 in size, the devices exhibited a tunneling magnetoresistance ratio of 7%. This low-current switching is mainly attributed to thermally assisted spin-transfer switching in consequence of its thermal magnetic behavior arising from Joule heating.
Optical and magneto-optical properties of amorphous Gd22Fe78 (GdFe) thin films prepared by direct current (DC) sputtering on thermally oxidized substrates were characterized by the combination of spectroscopic ellipsometry and magneto-optical spectroscopy in the photon energy range from 1.5 to 5.5 eV. Thin SiNx and Ru coatings were used to prevent the GdFe surface oxidation and contamination. Using advanced theoretical models spectral dependence of the complete permittivity tensor and spectral dependence of the absorption coefficient were deduced from experimental data. No significant changes in the optical properties upon different coatings were observed, indicating reliability of used analysis.
Abstract:We have developed an active matrix-addressed magneto-optical spatial light modulator driven by spin-transfer switching (spin-SLM) which has a 100 × 100 array pixel layout with a 2 µm pixel pitch. It has pixel-selection-transistors and logic circuits which convert serial data into parallel data to reduce input terminals. We have confirmed successful magnetization switching of each pixel by injecting a pulse current generated from the logic circuit, and its optical display capability by showing digital characters.
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