Articles you may be interested inThe effect of film and interface structure on the transport properties of Heusler based current-perpendicular-toplane spin valves Layer thickness effect on the magnetoresistance of a current-perpendicular-to-plane spin valve
Spin transfer switching (STS) characteristics of two closely arranged spin valve (SV) pillars sharing a pair of top and bottom electrodes were investigated. Each pillar had a 300×100nm2 rectangular shape, which was fabricated by electron beam lithography. The separation between the pillars was 300nm or 1μm. The STS curves clearly show the two-step switching of the free layer for the device with a separation of 300nm. The first switching occurred at a switching current density of a single SV pillar or below. The second switching occurred at a switching current density approximately 1.2 times the first one. Furthermore, the STS characteristics of the paired free layers were estimated by a micromagnetic simulation using the Landau–Lifshitz–Gilbert–Slonczewski equation, which showed similar switching behavior to the experimental result of the free layers switched first.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.