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Xiao-Bo( ) 1,4;1) XIAO Hua-Lin()

The time calibration for end cap TOF system of BESIII is studied in this paper. It has achieved about 110 ps time resolution for muons in dimu events. The pulse height correction using electronic scan curve and the predicted time calculated using Kalman filter method are introduced. This paper also describes the study of using electrons and muons as calibration samples.

The Beijing Spectrometer III (BESIII) endcap Time-Of-Filght (ETOF) was proposed to upgrade with Multigap Resistive Plate Chamber (MRPC) technology to substitute the current ETOF of scintillator+PMT for extending time resolutin better than 80 ps and enhance the particle identification capability to satisfy the higher precision requirement of physics. The ETOF system including MRPC modules, front end electronics (FEE), CLOCK module, fast control boards and time to digital modules (TDIG), has been designed, constructed and done some experimental tests seperately. Aiming at examining the quality of entire ETOF system and training the operation of all participated parts, a cosmic ray test system was built at the laboratory and underwent about three months to guarantee performance. In this paper the results will be presented indicating that the entire ETOF system works well and satisfies the requirements of the upgrade.

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Microchannel plate (MCP) as a key part is a kind of electron multiplied device applied in many scientific fields. Oxide thin films such as zinc oxide doped with aluminum oxide (ZnO:Al2O3) as conductive layer and pure aluminum oxide (Al2O3) as secondary electron emission (SEE) layer were prepared in the pores of MCP via atomic layer deposition (ALD) which is a method that can precisely control thin film thickness on a substrate with a high aspect ratio structure. In this paper, nano-oxide thin films ZnO:Al2O3 and Al2O3 were prepared onto varied kinds of substrates by ALD technique, and the morphology, element distribution, structure, and surface chemical states of samples were systematically investigated by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray diffraction (XRD), and X-ray photoemission spectroscopy (XPS), respectively. Finally, electrical properties of an MCP device as a function of nano-oxide thin film thickness were firstly studied, and the electrical measurement results showed that the average gain of MCP was greater than 2,000 at DC 800 V with nano-oxide thin film thickness approximately 122 nm. During electrical measurement, current jitter was observed, and possible reasons were preliminarily proposed to explain the observed experimental phenomenon.

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