Ceramic insulator is widely used in Indonesian electrical power distribution system. Based on previous research, it is obtained that silicone rubber coating can improve the performance of ceramic insulator due to better hydrophobicity. This paper presents performance of ceramic insulator with and without silicone rubber coating in a coastal area of Pangandaran. 6 silicone rubber coated and 6 uncoated of 20 kV distribution insulators have been installed in the field to get natural aging process for 5 years and 4 months. Along the aging process, their surface properties have been checked periodically. Monitored parameters are magnitude of leakage current, THD, hydrophobicity, and surface temperature of insulator. The result has shown that after 5 years and 4 months aging in coastal area without maintenance, silicone rubber coated ceramic insulator has better performance.
Abstract. Carbon deposition on SnO2 layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO2 thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O2 at 225ºC. Carbon sputtering process was carried out at pressure of 4.6x10 -2 Torr by keeping the substrate temperature of 300 ºC for sputtering deposition time of 1 to 4 hours. The properties of SnO2/Si structure and carbon thin film on SnO2 is characterized using SEM, EDAX, XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO2. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.
Westudy the structural characteristic of carbon based thin filmprepared by DC unbalanced magnetron sputtering technique on different buffer layer such as γ-Al2O3, SnO2, and Cu. Sputtering parameters of carbon thin film were maintained identical for each buffer layer. Fe-doped carbon pellet and Argon gas have been used as sputtering target and to generate the sputtering plasma, respectively. The roles of buffer layer for the quality of carbon-based thin film have been investigated by X-ray diffraction and Raman spectroscopy analysis. Raman spectra indicatethe formation of agoodquality carbon thin film with crystal-like structure on γ-Al2O3and Cu buffer layer, in contrast to the SnO2buffer layer case. Furthermore Raman spectra confirm thehoneycomb structure with fewer defects in γ-Al2O3indicating that it is more suitable buffer layer than the other. We argue that γ-Al2O3buffer layerprovide a good nucleation site and promote a better atomic arrangement for carbon atoms to form a few layergraphene-like structure. The atomic geometry of γ-Al2O3supports the hexagonal atomic configurationfor carbon atom inthe formation of a few layers graphene. This study mightgive a new approach for the carbon based deposition towards the devices application.
The electrical properties of Metal Insulator Semiconductor (MIS) structure comprise of carbon-based thin film grown on γ-Al2O3/Si have been studied. The carbon based thin film is deposited by using DC unbalanced magnetron sputtering using Fe doped carbon pellet as a target. Electrical properties of this structure have been analyzed through I-V characteristics measurements using cross-sectional electrode configurations. In-plane I-V measurement confirms the electrical conductivity of carbon layer is higher than Al2O3. The role of carbon thin film has been investigated by comparing the I-V characteristic of MIS structure with and without carbon thin film. Carbon layer and interface states of carbon/γ-Al2O3 have a significant contribution to enhance the cross-sectional current density. A simple energy band diagram model and theoretical calculation have been developed to further analyze this I-V characteristics data. This study is expected to be an alternative way to support the realization of future carbon-based electronic devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.