Time dependence of carbon film deposition on SnO2/Si using DC unbalanced magnetron sputtering

Abstract

Abstract. Carbon deposition on SnO2 layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO2 thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O2 at 225ºC. Carbon sputtering process was carried out at pressure of 4.6x10 -2 Torr by keeping the substrate temperature of 300 ºC for sputtering deposition time of 1 to 4 hours. The properties of SnO2/Si structure and carbon thin film on SnO2 is characterized using SEM, EDAX, XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO2. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.