The difluorobenzene-incorporated polymer showed strong ordering in edge-on mode, resulting in a significant reduction in the leakage current, and thus PFBT2OBT:PC70BM devices showed highly improved detectivity of over 1013 Jones at −2V.
The julolidine based interfacial modifier (IM-J) for cathode buffer layer following the "donor-acceptor" design concept with julolidine substituent as an electron donating moiety was incoporated to improve the surface properties of ZnO. Simple treatment of metal oxide type cathode buffer materials with organic interfacial modifier induces the enhanced photovoltaic performance and could effectively overcome several interfacial problems in inverted organic photovoltaic cells (I-OPVs). We studied on the coverage of IM-J on ZnO surface with variation of solution concentrations to reduce charge recombination and macroscopic phase separation. At the optimum condition, ZnO/IM-J (0.05 w/v%), IM-J significantly decreased the surface tension (46.1 mN/m) and improved surface morphology (RMS roughness: 0.61 nm). As a result, compared to the unmodified ZnO based device, the ZnO/IM-J based I-OPVs showed significantly improved power conversion efficiency (PCE) from 7.41 to 8.07% due to the increased photocurrent density (Jsc) and fill factor (FF). It is concluded that IM-J is one of the promising candidates for controlling electronic property of ZnO buffer layer in inverted organic photovoltaic cells. Also, our interfacial modified system can be utilized in other optoelectronic devices.
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