No abstract

No abstract

Novel zinc oxide (ZnO) inks via mixing a soluble aqueous ZnO precursor with ZnO nanoparticles suitable for low temperature processing of the thin film transistors (TFTs) were prepared. ZnO TFTs produced from the proposed ZnO mixture ink exhibited significantly enhanced field effect mobility of 1.75 cm 2 V −1 s −1 and an on/off ratio of 5.89 × 10 8 even at low processing temperature of 250 °C. Various structural analyses were performed to investigate the influence of ZnO nanoparticles inclusion into the thin film nanostructure on the structural, chemical, and electrical characteristics of the ZnO TFTs.

The difluorobenzene-incorporated polymer showed strong ordering in edge-on mode, resulting in a significant reduction in the leakage current, and thus PFBT2OBT:PC70BM devices showed highly improved detectivity of over 1013 Jones at −2V.

Incorporation of a 2,5-difluorobenzene (F2B) moiety provides a unique structure with improved molecular ordering and blend morphology, giving a PCE reaching 5% using an F2B-containing acceptor (F2B-T2PDI) whereas using a counterpart acceptor gave only 3.63%.