A new super junction trench MOSFET which has n-huffer regions hetween trench gates and n columns was designed and demonstrated. In this structure, the speeiSc nn-resistance (RON) does not increase as long as the trench gate
This article analyzes Japan's dual role in the Kyoto Protocol negotiations. It argues that the successful conclusion to the 1997 Kyoto Protocol can be partly attributed to Japan's dual role as negotiator and mediator. As the host of the Kyoto Conference, Japan undertook the mediator's role prior to and during the conference negotiation process. At the same time, as a participant to the conference, Japan took a negotiator's role to meet its own interests in the negotiations. Despite its initial position as a self-interested negotiator like any other country, Japan ended up in a different position than expected because of its broader role as mediator. By reviewing Japanese efforts to bring the protocol negotiations to a successful conclusion, the article examines the dynamics of the two dimensions of mediation and negotiation in international treaty-making.
We have proposed a fabrication method of Super Junction (SI) diodes with low leakage current characteristics by using a wet anisotropic trench etching and Si(ll1) oriented trench epitaxial filling processes. The SJ diodes show electrical characteristic with breakdown voltage of 225V and leakage current density below Ix10'A/cm2. By the experimental comparisons among three types of SJ diodes of the (111) oriented trench formed by the wet anisotropic etching, (111) and (010) oriented trench formed by conventional Reactive Ion Etching (ME) process, we have clarified an effect of the wet etching process on the lower leakage characteristics of the trench tilling SJ diode.
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