We report the electric‐field modulation of magnetism of a hexagonal Cr1–δTe thin film. A gate voltage VG is ap‐plied in the field effect capacitor (FEC) structure consisting of electric double‐layer capacitor (EDLC) of an ion liquid and a 2nm‐thick Cr1–δTe layer grown by molecular beam epitaxy (MBE) and the magnetization of the layer is directly measured using a superconducting quantum interference device (SQUID) magnetometer in the both configurations with magnetic fields perpendicular or parallel to the film plane. As a result, we observe a clear change in the magnetization vs. magnetic field (M‐H) curves by applying VG at a low temperature of 15 K in the perpendicular field configuration; the magnetization increases and the coercivity decreases by applying either positive or negative gate voltage. When the temperature is increased up to 160K, slightly lower than the Curie temperature, or the magnetization was measured in the in‐plane field configuration, the magnetization increases similarly by applying either positive or negative gate voltage, but the amount of the increase becomes much smaller. A possible mechanism of the electric‐field modulation is discussed in relation to the Cr vacancies in the Cr1–δTe layer. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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