Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

Oikawa, Haruyoshi; Akiyama, Ryota; Kanazawa, K.; Kuroda, Shinji; Harayama, Isao; Nagashima, Kōzō; Sekiba, Daiichiro; Ashizawa, Yoshito; Tsukamoto, Arata; Nakagawa, K.; Ota, Norio

doi:10.1016/j.tsf.2014.11.081

Cited by 20 publications

(10 citation statements)

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“…The study of the formation of the compound AlN using a reactive atmosphere has been discussed in several works for instance Oikawa et al reported the evolution of the Al bonding in AlN thin films grown by reactive deposition of thermally evaporated Al and RF excited nitrogen plasma [19]. Wang et al, reported the nitrogen bonding in aluminum oxynitrate films obtained by ion-beam sputtering [20].…”

Section: Introductionmentioning

confidence: 99%

Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target

et al. 2019

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We report the synthesis of AlN hexagonal thin films by pulsed laser ablation, using Al target in nitrogen ambient over natively-oxidized Si (111) at 600°C. Composition and chemical state were determined by X-ray photoelectron spectroscopy (XPS); while structural properties were investigated using X-ray diffraction (XRD). High-resolution XPS spectra present a gradual shift to higher binding energies on the Al2ppeak when nitrogen pressure is incremented, indicating the formation of the AlN compound. At 30 mTorr nitrogen pressure, theAl2p peak corresponds to AlN, located at 73.1 eV, and the XRD pattern shows a hexagonal phase of AlN. The successful formation of the AlN compound is corroborated by UV-Vis reflectivity measurements.

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Section: Introductionmentioning

confidence: 99%

Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target

et al. 2019

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“…Sputtered aluminum nitride (AlN), depending on composition and microstructure, can fulfill several functional demands such as optical functionalization [1,2], high-k dielectric [3,4], piezoelectric element [5,6], microelectromechanical systems (MEMS) resonators [6] or heat spreader [7]. It is therefore widely used in electronic circuits and MEMS devices.…”

Section: Introductionmentioning

confidence: 99%

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

et al. 2018

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This work compares the deposition of aluminum nitride by magnetron sputtering on silicon to multilayer ceramic substrates. The variation of sputter parameters in a wide range following a fractional factorial experimental design generates diverse crystallographic properties of the layers. Crystal growth, composition, and stress are distinguished because of substrate morphology and thermal conditions. The best c-axis orientation of aluminum nitride emerges on ceramic substrates at a heater temperature of 150 • C and sputter power of 400 W. Layers deposited on ceramic show stronger c-axis texture than those deposited on silicon due to higher surface temperature. The nucleation differs significantly dependent on the substrate. It is demonstrated that a ceramic substrate material with an adapted coefficient of thermal expansion to aluminum nitride allows reducing the layer stress considerably, independent on process temperature. Layers sputtered on silicon partly peeled off, while they adhere well on ceramic without crack formation. Direct deposition on ceramic enables thus the development of optimized layers, avoiding restrictions by stress compensating needs affecting functional properties.

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“…The developed system worked well to determine the compositional ratio of N, O, and metals (cations) in films by tuning the lengths of electrodes and the gas pressure. Some applications of the developed system were previously published on the amorphous AlNx [14], epitaxial InOxFy [15], and epitaxial CoOxNy [16] thin films.…”

Section: Introductionmentioning

confidence: 99%

Development of ΔE-E telescope ERDA with 40 MeV 35Cl7+ beam at MALT in the University of Tokyo optimized for analysis of metal oxynitride thin films

Harayama

Nagashima

Hirose

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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We have developed a compact E-E telescope elastic recoil detection analysis (ERDA) system, for the first time at Micro Analysis Laboratory, Tandem Accelerator (MALT) in the University of Tokyo, which consists of a gas ionization chamber and solid state detector (SSD) for the quantitative analysis of light elements. The gas ionization chamber is designed to identify the recoils of O and N from metal oxynitrides thin films irradiated with 40 MeV 35 Cl 7+. The length of the electrodes along the beam direction is 50 mm optimized to sufficiently separate energy loss of O and N recoils in P10 gas at 6.0 × 10 3 Pa. The performance of the gas ionization chamber was examined by comparing the ERDA results on the SrTaO2N thin films with semi-empirical simulation and the chemical compositions previously determined by nuclear reaction analysis (NRA) and Rutherford backscattering spectrometry (RBS). We also confirmed availability of the gas ionization chamber for identifying not only the recoils of O and N but also those of lithium, carbon and fluorine.

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Deposition and characterization of amorphous aluminum nitride thin films for a gate insulator

Cited by 20 publications

References 20 publications

Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target

Deposit of AlN thin films by nitrogen reactive pulsed laser ablation using an Al target

Magnetron Sputtered AlN Layers on LTCC Multilayer and Silicon Substrates

Development of ΔE-E telescope ERDA with 40 MeV 35Cl7+ beam at MALT in the University of Tokyo optimized for analysis of metal oxynitride thin films

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