Articles you may be interested inHigh resolution quantitative two-dimensional dopant mapping using energy-filtered secondary electron imaging Secondary electron ͑SE͒ imaging of semiconductors reveals contrast between n-and p-type areas that can serve as the basis for a two-dimensional dopant profiling technique. In this article, recent experiments that address sensitivity, spatial resolution, calibration methodology, p/n junction effects, and sample preparation issues are reviewed and discussed for boron doped silicon. In addition, several examples of successful applications of SE imaging as a two-dimensional dopant profiling technique are presented.

No abstract

No abstract

We investigate the optimization of laser ablation with a femtosecond laser for direct and indirect removal of SiN x on alkaline textured c-Si. Our proposed resist-free indirect removal process uses an a-Si:H etch mask and is demonstrated to have a drastically improved surface quality of the laser processed areas when compared to our direct removal process. Scanning electron microscope images of ablated sites show the existence of substantial surface defects for the standard direct removal process, and the reduction of those defects with our proposed process. Opening of SiN x and SiO x passivating layers with laser ablation is a promising alternative to the standard screen print and fire process for making contact to Si solar cells. The potential for small contacts from laser openings of dielectrics coupled with the selective deposition of metal from light induced plating allows for high-aspect-ratio metal contacts for front grid metallization. The minimization of defects generated in this process would serve to enhance the performance of the device and provides the motivation for our work.Published by Elsevier B.V.

No abstract