Luminescence quenching in the presence of polarons is one of the major challenges in organic light emitting devices. In this work, exciton quenching in the presence of polarons is studied using phase sensitive photocurrent measurements on pentacene field effect transistors. The enhancement of conduction in the organic field effect transistors on light illumination is studied using photocurrent spectral response measurements and corresponding optical simulations. The photocurrent is shown to be governed by the polaron mobility and the exciton quenching efficiency, both of which depend on the polaron density in the channel. Two models are proposed on the exciton dynamics in the presence of gate induced polarons in the transistor channel. The first model simulates the steady-state exciton concentration profile in the presence of exciton-polaron interaction. The second one is a three-dimensional steady state exciton-polaron interaction model, which supports the findings from the first model. It is shown that the excitons quench by transferring its energy to polarons, thereby promoting the latter to high energy states in the density of states manifold. The polarons move in the higher energy states with greater microscopic mobility before thermalizing, thereby leading to an enhancement of conduction. It is observed that for the present system, where charge carrier transport is by hopping, all polarons interact with excitons. This implies that for low mobility systems, the interaction is not limited to deep trapped polarons.
A major loss mechanism in high intensity organic light-emitting devices is the quenching of excitons in the presence of polarons. In this work, the interaction of excitons in N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) with holes in pentacene is studied in a pentacene/NPB bilayer organic field-effect transistor. Gate-modulated steady-state photoluminescence quenching measurements are performed. The excitons are confined in NPB and the polarons in an ultrathin layer of pentacene at the pentacene/NPB organic heterojunction. It is shown that excitons are quenched by polarons, even if they are located on different materials, provided that the exciton and polaron are separated by a length within which efficient Forster resonance energy transfer can occur. The experimental findings are supported by a steady-state three-dimensional simulation of the gate voltage-dependent exciton−polaron quenching efficiency. The Forster resonant energy transfer radius for exciton−polaron interaction at the pentacene/NPB heterojunction is estimated to be in the range of 2.3−3.0 nm.
4,4′-bis[(N-carbazole) styryl] biphenyl (BSB4 or BSBCz) is one of the widely studied organic fluorescent materials for blue organic electroluminescent devices in the recent times. In this work, BSB4 is used as a guest material to construct the host-guest matrix for the emissive layer (EML) of a pure blue fluorescent organic light-emitting diode (OLED). A pure blue emission suitable for display application with a Commission Internationale de l’Eclairage (CIE) coordinate of (0.147, 0.070) is achieved by the blue-shift of the emission spectrum of the host-guest matrix from that of the pristine guest (BSB4) molecules. The optimization of OLED structures is carried out by considering (i) charge balance in the emissive layer for high exciton density, and (ii) optical interference of generated light in the organic layers for increased light outcoupling. A thorough comparative study on the use of different combinations of widely used hole and electron transport layers to obtain charge balance in the EML of the OLED, thereby enhancing the external quantum efficiency (EQE) is shown. Optical interference effects in the fabricated OLEDs are analyzed by optical simulation of each device structure by transfer matrix method (TMM). With the optimized device structures, we are able to overcome the 2% EQE limit that has been reported so far for blue fluorescent OLEDs with BSB4 as light emitting material and achieve a maximum EQE of 4.08%, which is near to the theoretical limit of EQE for fluorescent OLEDs.
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