“…As the ionized polyelectrolyte can bind holes by Coulomb force, the localized holes (i.e., polarons) quench excitons by a nonradiative recombination path, resulting in photoluminescence attenuation. [
11,27,31–33 ] For example, in 18.8 nm C8‐BTBT microstripes ( Figure a), the photoluminescence intensity is attenuated by ≈42% at a gate bias of − 3 V. We define the attenuation degree of photoluminescence intensity as the relative exciton quenching efficiency ( Q ): [
27,31 ]
where PL G and PL 0 denote the photoluminescence intensity with and without gate bias, respectively. As shown in Figure 2; Figure S7, Supporting Information, the relative exciton quenching efficiency decreases with increasing film thickness, indicating that the EPQ effect is gradually weakened in thick OS microstripes.…”