In this work, a high temperature THz detector based on a GaN high electron mobility transistor (HEMT) with nano antenna structures was fabricated and demonstrated to be able to work up to 200 °C. The THz responsivity and noise equivalent power (NEP) of the device were characterized at 0.14 THz radiation over a wide temperature range from room temperature to 200 °C. A high responsivity Rv of 15.5 and 2.7 kV/W and a low NEP of 0.58 and 10 pW/Hz0.5 were obtained at room temperature and 200 °C, respectively. The advantages of the GaN HEMT over other types of field effect transistors for high temperature terahertz detection are discussed. The physical mechanisms responsible for the temperature dependence of the responsivity and NEP of the GaN HEMT are also analyzed thoroughly.
Novel hybrid metal-graphene metamaterials featuring dynamically controllable single, double and multiple plasmon induced transparency (PIT) windows are numerically explored in the terahertz (THz) regime. The designed plasmonic metamaterials composed of a strip and a ring with graphene integration generate a novel PIT window. Once the ring is divided into pairs of asymmetrical arcs, double PIT windows both with the spectral contrast ratio 100% are obtained, where one originates from the destructive interference between bright-dark modes, and the other is based on the interaction of bright-bright modes. Just because the double PIT windows are induced by two different mechanisms, the continuously controllable conductivity and damping of graphene are employed to appropriately interpret the high tunability in double transparency peaks at the resonant frequency, respectively. Moreover, multiple PIT windows can be achieved by introducing an additional bright mode to form the other bright-bright modes coupling. At the PIT transparent windows, the dispersions undergo tremendous modifications and the group delays reach up to 43 ps, 22 ps, and 25 ps, correspondingly. Our results suggest the existence of strong interaction between the monolayer graphene layer and metal-based resonant plasmonic metamaterials, which may hold widely applications in filters, modulators, switching, sensors and optical buffers.
We report a sub-terahertz (THz) detector based on a 0.25-µm-gate-length AlGaN/GaN high-electron-mobility transistor (HEMT) on a Si substrate with nanoantennas. The fabricated device shows excellent performance with a maximum responsivity (R
v) of 15 kV/W and a minimal noise equivalent power (NEP) of 0.58 pW/Hz0.5 for 0.14 THz radiation at room temperature. We consider these excellent results as due to the design of asymmetric nanoantennas. From simulation, we show that indeed such nanoantennas can effectively enhance the local electric field induced by sub-THz radiation and thereby improve the detection response. The excellent results indicate that GaN HEMTs with nanoantennas are future competitive detectors for sub-THz and THz imaging applications.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.