High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

Hou, Haowen; Liu, Z.; Teng, Jinghua; Palacios, Tomás; Chua, Soo Jin

doi:10.1038/srep46664

Cited by 52 publications

(43 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Field effect transistors (FETs) have recently found an unexpected application for the rectification of THz and sub-THz signals beyond their cutoff frequency 1 , 2 . This technology paves the way for on-chip 3 , low-noise 4 , and sub-nanosecond radiation detection 5 , 6 enabling ≳10 Gb/s data transfer rates. Contrary to competing diode rectifiers, FETs offer the possibility of phase-sensitive detection 7 , 8 vital for noise-immune communications with phase modulated signals.…”

Section: Introductionmentioning

confidence: 99%

Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko

Alymov

et al. 2021

Nat Commun

View full text Add to dashboard Cite

The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here, we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG’s electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high responsivity (>4 kV/W) and low-noise (0.2 pW/$$\sqrt{{\rm{Hz}}}$$ Hz ) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors’ responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.

show abstract

Section: Introductionmentioning

confidence: 99%

Tunnel field-effect transistors for sensitive terahertz detection

Gayduchenko

Alymov

et al. 2021

Nat Commun

View full text Add to dashboard Cite

show abstract

“…During the last decade, new promising 2D materials have recently attracted interest to develop room-temperature solid-state THz sensors [14]. However, so far, only devices based on III-V materials [15] and silicon [16] have proved experimentally their potential to build low-cost, compact, scalable, and reliable systems; accordingly, the extension of the frequency range of these devices generates a great interest in THz detection.…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs

Delgado-Notario¹,

Clericò²,

Fobelets³

et al. 2018

Design, Simulation and Construction of Field Effect Transistors

View full text Add to dashboard Cite

This chapter reports on an experimental and theoretical study of Schottky-gated strained-Si modulation-doped field-effect transistors (MODFETs) with different sub-micron gate lengths (100, 250, and 500 nm). Room-temperature detection of terahertz (THz) radiation by the strained-Si MODFETs was performed at two frequencies (0.15 and 0.3 THz). A technology computer-aided design (TCAD) analysis based on a two-dimensional hydrodynamic model (HDM) was used to investigate the transistor response to THz radiation excitation. TCAD simulation was validated through comparison with DC and low-frequency AC measurements. It was found that the photoresponse of the transistors can be improved by applying a constant drain-to-source bias. This enhancement was observed both theoretically and experimentally. The HDM model satisfactorily describes the experimental dependence of the photoresponse on the excitation frequency, the gate bias, and the drain-to-source current bias. The coupling of the incoming THz radiation to the MODFETs was studied at 0.15 and 0.3 THz. Finally, to demonstrate the suitability of strained-Si MODFET for terahertz applications, an image sensor within a pixel-by-pixel terahertz imaging system for the inspection of hidden objects was used.

show abstract

“…Terahertz (THz) technology has engrossed many attentions because of its promising applications in various domains such as medical, biological, industrial imaging, broadband, safety communication, radar, and space science (Hao et al, ). However, because of the complexity in generation and detection of terahertz radiations, these applications have been held back (H. W. Hou et al, ). In view of this, with the development in the field of THz technologies, compact, high‐speed, THz detectors/sources are highly enviable (Blin et al, ; Ojefors et al, ).…”

Section: Introductionmentioning

confidence: 99%

Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

et al. 2019

View full text Add to dashboard Cite

High‐electron‐mobility transistors (HEMTs) utilizing gallium nitride (GaN)‐based heterostructures are potential structures for the development of room temperature terahertz (THz) source and detectors. The corresponding material system also offers immense and exciting physical effects governing its behavior at THz frequencies. This behavioral simulation has been attempted for undoped aluminum gallium nitride/ aluminum nitride /GaN heterostructure for THz applications in the present work using technology computer‐aided design platform. Self‐consistent solutions of Schrodinger and Poisson equations are solved to calculate quantized energy states. The work also presents physics‐based device modeling of GaN HEMT structure using the simulated properties of heterostructure like electron mobility, two‐dimensional electron gas concentration, polarization charge concentration, conduction band energies, and so forth. Measurement‐based approach has been adopted to increase the reliability of the simulation and modeling. Various semiconductor characterization techniques have been utilized for this purpose. It is studied and presented that intersubband transition phenomenon is possible mode especially at THz frequency and can significantly contribute to extend the GaN‐HEMT operating frequency well beyond its present cutoff frequency to THz band.

show abstract

High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor

Cited by 52 publications

References 28 publications

Tunnel field-effect transistors for sensitive terahertz detection

Tunnel field-effect transistors for sensitive terahertz detection

Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs

Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

Contact Info

Product

Resources

About