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PSS. In addition, hydrogenated amorphous silicon thin films were deposited with PEVCD method as the passivation and back surface field (BSF) layer to decrease the rear surface recombination rate, thus increasing the long wavelength response. Finally, a power conversion efficiency of 13.78% was achieved after depositing MoO3 on the front of the device as the antireflection layer.

Low-temperature, solution-processed perovskite solar cells (PSCs), which utilized organic poly [4,8-bis[(2-ethylhexyl) [3,4-b]-thiophenediyl] (PTB7) as a hole-transport layer (HTL), achieved a power conversion efficiency (PCE) as high as 13.29% when fabricated in ambient air. Through a comparative study, we demonstrate this PCE value to be superior compared to its counterparts with Spiro-OMeTAD or P3HT as the HTL; the superiority consists in higher fill factor (FF) and open-circuit voltage (V oc ). By probing the absorption spectrum of CH 3 NH 3 PbI 3-x Cl x before and after spin-coating the PTB7, it is discovered that the spin coating of PTB7 has little influence on the quality of the perovskite films. Furthermore, it is shown that PTB7 possesses higher conductivity compared with conventional HTLs, including Spiro-OMeTAD, P3HT and PCDTBT. Moreover, in order to further improve device performance, the prevalent additives lithium bis (trifluoromethylsulphony) imide (LiTFSI) and 4-tert-butylpyridine (t-Bp) are investigated, along with a post-annealing process that is applied to the whole device. The results presented here and the overall fabrication method represent a helpful new approach for fabricating highly efficient perovskite -based photovoltaic devices.

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In this work, a facile and low temperature processed anodic oxidation approach is proposed for fabricating compact and homogeneous titanium dioxide film (AO-TiO2). In order to realize morphology and thickness control of AO-TiO2, the theory concerning anodic oxidation (AO) is unveiled and the influence of relevant parameters during the process of AO such as electrolyte ingredient and oxidation voltage on AO-TiO2 formation is observed as well. Meanwhile, we demonstrate that the planar perovskite solar cells (p-PSCs) fabricated in ambient air and utilizing optimized AO-TiO2 as electron transport layer (ETL) can deliver repeatable power conversion efficiency (PCE) over 13%, which possess superior open-circuit voltage (Voc) and higher fill factor (FF) compared to its counterpart utilizing conventional high temperature processed compact TiO2 (c-TiO2) as ETL. Through a further comparative study, it is indicated that the improvement of device performance should be attributed to more effective electron collection from perovskite layer to AO-TiO2 and the decrease of device series resistance. Furthermore, hysteresis effect about current density-voltage (J-V) curves in TiO2-based p-PSCs is also unveiled.

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Micromechanical resonators with ultra-low energy dissipation are essential for a wide range of applications, such as navigation in GPS-denied environments. Routinely implemented in silicon (Si), their energy dissipation often reaches the quantum limits of Si, which can be surpassed by using materials with lower intrinsic loss. This paper explores dissipation limits in 4H monocrystalline silicon carbide-on-insulator (4H-SiCOI) mechanical resonators fabricated at wafer-level, and reports on ultra-high quality-factors (Q) in gyroscopic-mode disk resonators. The SiC disk resonators are anchored upon an acoustically-engineered Si substrate containing a phononic crystal which suppresses anchor loss and promises QANCHOR near 1 Billion by design. Operating deep in the adiabatic regime, the bulk acoustic wave (BAW) modes of solid SiC disks are mostly free of bulk thermoelastic damping. Capacitively-transduced SiC BAW disk resonators consistently display gyroscopic m = 3 modes with Q-factors above 2 Million (M) at 6.29 MHz, limited by surface TED due to microscale roughness along the disk sidewalls. The surface TED limit is revealed by optical measurements on a SiC disk, with nanoscale smooth sidewalls, exhibiting Q = 18 M at 5.3 MHz, corresponding to f · Q = 9 · 1013 Hz, a 5-fold improvement over the Akhiezer limit of Si. Our results pave the path for integrated SiC resonators and resonant gyroscopes with Q-factors beyond the reach of Si.