Impact of oxygen bonding on the atomic structure and photoluminescence properties of Si-rich silicon nitride thin films J. Appl. Phys. 112, 073514 (2012) Electron spin resonance features of the Ge Pb1 dangling bond defect in condensation-grown (100)Si/SiO2/Si1−xGex/SiO2 heterostructures J. Appl. Phys. 112, 074501 (2012) Capacitance spectroscopy study of deep levels in Cl-implanted 4H-SiC J. Appl. Phys. 112, 063717 (2012) Investigation of defect levels in Cs2Hg6S7 single crystals by photoconductivity and photoluminescence spectroscopies J. Appl. Phys. 112, 063702 (2012) Flat bands near Fermi level of topological line defects on graphite A method to deduce energy distributions of defects in the band gap of a semiconductor by measuring the complex admittance of a junction is proposed. It consists of calculating the derivative of the junction capacitance with respect to the angular frequency of the ac signal corrected by a factor taking into account the band bending and the drop of the ac signal over the space charge region of the junction. Numerical modeling demonstrates that defect distributions in energy can be reconstructed by this method with high accuracy. Defect distributions of polycrystalline Cu͑In,Ga͒Se 2 thin films are determined by this method from temperature dependent admittance measurements on heterojunctions of Cu͑In,Ga͒Se 2 with ZnO that are used as efficient thin film solar cells.

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