A 3D network polymer,P5-P, for the removal of organic micropollutants from water with high adsorption efficiency has been successfully prepared by crosslinking a carboxyl-derived pillar[5]arene andp-phenylenediamine.

Materials demonstrating unusual large positive and negative thermal expansion are fascinating for their potential applications as high-precision microscale actuators and thermal expansion compensators for normal solids. However, manipulating molecular motion to execute huge thermal expansion of materials remains a formidable challenge. Here, we report a single-crystal Cu(II) complex exhibiting giant thermal expansion actuated by collective reorientation of imidazoliums. The circular molecular cations, which are rotationally disordered at a high temperature and statically ordered at a low temperature, demonstrate significant reorientation in the molecular planes. Such atypical molecular motion, revealed by variable-temperature single crystal X-ray diffraction and solid-state NMR analyses, drives an exceptionally large positive thermal expansion and a negative thermal expansion in a perpendicular direction of the crystal. The consequent large shape change (~10%) of bulk material, with remarkable durability, suggests that this complex is a strong candidate as a microscale thermal actuating material.

We demonstrate a III-V/silicon hybrid external cavity laser with a tuning range larger than 60 nm at the C-band on a silicon-on-insulator platform. A III-V semiconductor gain chip is hybridized into the silicon chip by edge-coupling the silicon chip through a SiN spot size converter. The demonstrated packaging method requires only passive alignment and is thus suitable for high-volume production. The laser has a largest output power of 11 mW with a maximum wall-plug efficiency of 4.2%, tunability of 60 nm (more than covering the C-band), and a side-mode suppression ratio of 55 dB (>46 dB across the C-band). The lowest measured linewidth is 37 kHz (<80 kHz across the C-band), which is the narrowest linewidth using a silicon-based external cavity. In addition, we successfully demonstrate all silicon-photonics-based transmission of 34 Gbaud (272 Gb/s) dual-polarization 16-QAM using our integrated laser and silicon photonic coherent transceiver. The results show no additional penalty compared to commercially available narrow linewidth tunable lasers. To the best of our knowledge, this is the first experimental demonstration of a complete silicon photonic based coherent link. This is also the first experimental demonstration of >250 Gb/s coherent optical transmission using a silicon micro-ring-based tunable laser.

We present a highly efficient polarization splitter and rotator (PSR), fabricated using 248 nm deep ultraviolet lithography on a silicon-on-insulator substrate. The PSR is based on a double-etched directional coupler with a length of 27 µm. The fabricated PSR yields a TM-to-TE conversion loss better than 0.5 dB and TE insertion loss better than 0.3 dB, with an ultra-low crosstalk (-20 dB) in the wavelength regime 1540-1570 nm.

We present a compact and low loss 90° optical hybrid on a silicon-on-insulator (SOI) platform for coherent receiving systems. Our 90° optical hybrid uses a novel topology, comprising one Y-junction and three 2x2 multimode interference (MMI) couplers. The geometry of the 90° optical hybrid is fully optimized using particle swarm optimization (PSO). The fabricated 90° optical hybrid has a compact footprint of 21.6 µm x 27.9 µm, with an insertion loss less than 0.5 dB, a common mode rejection ratio (CMRR) larger than 30 dB, and phase error smaller than 3° in the C-band across 22 reticles on one wafer. The measured phase error (< 3°) in a packaged coherent receiver further confirms the excellent performance of the 90° optical hybrid.

We present an ultracompact (15.3 μm long) and high-efficiency silicon-on-insulator polarization rotator designed for polarization-diversified circuits. The rotator is comprised of a bilevel-tapered TM0-to-TE1 mode converter and a novel bent-tapered TE1-to-TE0 mode converter. The rotator has a simulated polarization conversion loss lower than 0.2 dB and a polarization-extinction ratio larger than 25 dB over a wavelength range of 80 nm around 1550 nm. The rotator has a SiO2 top-cladding and can be fabricated in a CMOS-compatible process.

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