Nanoscale dielectric capacitors have been widely studied due to their ability to store a high amount of energy. In this research, we have modeled one which is composed of a few dopants graphene layers including Li, Be, B (of second row in Mendeleev table) separated by an insulating medium of a few horizontal boron nitride (h-BN) layers. It has been indicated that the boron atoms are the suitable dopants for hetero-structures of the X-G/(h-BN) m /X-G capacitor compared to those from groups IA or IIA. It has been specifically studied the quantum and coulomb blocked effects of different h-BN/graphene including hetero-structures, stacks for multi dielectric properties of different (h-BN) n /graphene. We have shown that the quantum effect has appeared in small thickness of capacitor due to number of layers and this effect cannot occur in the layers more than 4 of h-BN, while the m = 3 is suitable layer for the capacitor simulation.
The structures of graphite carbonadoes and hexagonal boron nitride or h-BN, parent materials for carbonadoes and boron nitride nano-compounds are quite similar. The measured reversible Li+ capacities of X-G// (h-BN)// X-G (X=Be, B, N) in theanode materials are extremely improved compared to the graphite structures in the based anodes. In this study Boron nitride sheet has been localized inside twoX-graphene electrodes as an option to enhance electrochemical ratio.Additionally, we have found the structure of G-X/(h-BN)n/X-G can beforimproving the capacities and electrical transports in the C-BN sheets of LIBs. In addition, the BN sheet modified and designed of X-G/ (h-BN)/X-G structures provide a strategyto improvethe yields of BN-G-sheet of anodes. X-G/h-BN/X-G could also be assembled into free standing electrode of any binder (current collector), which will causes for increasing specific energies and densities for the batteries design.
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