Articles you may be interested inComparison of fast three-dimensional simulation and actinic inspection for extreme ultraviolet masks with buried defects and absorber features
Thin ZnO films were deposited at room temperature on glass substrates by a pulsed filtered cathodic vacuum arc deposition system. The crystallographic structure and the size of the crystallites in the films were studied by means of x-ray diffraction. These measurements show that all the films are crystallized in the wurtzite form, present in a preferred orientation along the (002) direction, and the grain size is estimated to be 18.9-42 nm. The crystallite sizes were found to increase and the x-ray diffraction patterns were sharpened by annealing. Optical properties of the ZnO films were studied using a UV-visible spectrometer and calculations made using the envelope method. The absorption coefficient and optical band gap of the films were increased while the refractive index was decreased by annealing. The best annealing temperature for pulsed cathodic vacuum arc deposition grown ZnO thin films on glass substrates was found to be 600 • C from optical properties. This temperature is as high as can be measured for glass substrates samples because of the glass properties.
We report the discovery of Zn 0.456 In 1.084 Ge 0.460 O 3 , a material closely related to bixbyite. In contrast, however, the oxygen atoms in this new phase occupy 4 Wyckoff positions, which result in 4 four-coordinate, 24 sixcoordinate (2 different Wyckoff positions), and 4 eight-coordinate sites as compared to the 32 six-coordinate (also 2 different Wyckoff positions) sites of bixbyite. This highly ordered material is related to fluorite, Ag 6 GeSO 8 , and γ-UO 3 and is n-type with a bulk carrier concentration of 4.772 × 10 14 cm −3 . The reduced form displays an average room temperature conductivity of 99(11) S· cm −1 and an average optical band gap of 2.88(1) eV. These properties are comparable to those of In 2 O 3 , which is the host material for the current leading transparent conducting oxides. The structure of Zn 0.456 In 1.084 Ge 0.460 O 3 is solved from a combined refinement of synchrotron X-ray powder diffraction and time-of-flight neutron powder diffraction and confirmed with electron diffraction. The solution is a new, layered, tetragonal structure in the I4 1 /amd space group with a = 7.033986(19) Å and c = 19.74961(8) Å. The complex cationic topological network adopted by Zn 0.456 In 1.084 Ge 0.460 O 3 offers the potential for future studies to further understand carrier generation in ∼3 eV oxide semiconductors.
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