We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows that the quantum well emission, peaking at 1.23 μm at room temperature, can be improved by a rapid annealing at 650°C, while the use of a higher annealing temperature leads to emission degradation and blue-shifting due to the activation of non-radiative centers and bismuth diffusion from the quantum well.

The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms involving the Bi-related localized levels. Clear distinction between the localized and delocalized regime was observed in the spectral and temporal photoluminescence emission.

In this study, molecular beam epitaxial-grown GaAs/GaBiAs single quantum well systems with two different Bi contents were investigated. Spectral dependence of room temperature photomodulated reflectance (PR) and photoluminescence (PL) measurements in the temperature range of 35-300 K were employed. PR spectra indicate that increasing Bi concentration promotes a tendency to approach quantized higher energy levels in the heavy and light holes' bands due to the different effects of compressive strain, which depends on Bi concentrations. In addition, a defect level is identified at 0.71 eV at room temperature PR spectra and is attributed to a As Ga antisite defect in GaAs barrier layers caused by the low temperature growth process. From the analysis of the temperature dependence of emission energy and amplitude in the PL spectra, localized states are determined in the range of 8 to 45 meV and attributed to the different bonding configuration of Bi clusters. Low temperature PL results imply that Bi cluster states tend to move into the valance band when Bi content increases from 2.4 to 7.0% in the GaBiAs system.

Bulk GaAs1 - xBix/GaAs alloys with various bismuth compositions are studied using power- and temperature-dependent photoluminescence (PL), Raman scattering, and atomic force microscopy (AFM). PL measurements exhibit that the bandgap of the alloy decreases with increasing bismuth composition. Moreover, PL peak energy and PL characteristic are found to be excitation intensity dependent. The PL signal is detectable below 150 K at low excitation intensities, but quenches at higher temperatures. As excitation intensity is increased, PL can be observable at room temperature and PL peak energy blueshifts. The quenching temperature of the PL signal tends to shift to higher temperatures with increasing bismuth composition, giving rise to an increase in Bi-related localization energy of disorders. The composition dependence of the PL is also found to be power dependent, changing from about 63 to 87 meV/Bi% as excitation intensity is increased. In addition, S-shaped temperature dependence at low excitation intensities is observed, a well-known signature of localized levels above valence band. Applying Varshni’s law to the temperature dependence of the PL peak energy, the concentration dependence of Debye temperature (β) and thermal expansion coefficient (α) are determined. AFM observations show that bismuth islands are randomly distributed on the surface and the diameter of the islands tends to increase with increasing bismuth composition. Raman scattering spectra show that incorporation of Bi into GaAs causes a new feature at around 185 cm-1 with slightly increasing Raman intensity as the Bi concentration increases. A broad feature located between 210 and 250 cm-1 is also observed and its intensity increases with increasing Bi content. Furthermore, the forbidden transverse optical (TO) mode becomes more pronounced for the samples with higher bismuth composition, which can be attributed to the effect of Bi-induced disorders on crystal symmetry.PACS78.55Cr 78.55-m 78.20-e 78.30-j

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Articles you may be interested inEnhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells J. Appl. Phys. 116, 153504 (2014); 10.1063/1.4898389 Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy J. Appl. Phys. 95, 1050 (2004); 10.1063/1.1637936Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique Appl.Growth of high-quality GaAs/AlAs Bragg mirrors on patterned InP-based quantum well mesa structures

We report on the application of a new contactless method based on eddy currents with a view to characterizing some transport properties of a large range of semiconductors. The innovative approach of this work consists in measuring the impedance of the coil by reflectometry using a broadband multicarrier test signal. The device works well with silicon wafers with a constant conductivity over a wide frequency range. Because of their electrical conductivity and high optical transmittance in the visible and near-IR regions of electromagnetic spectrum, indium tin oxide (ITO) films have motivated great interests in experimental studies and technological applications. The estimation of their electrical conductivity is a key point to develop these devices. On this paper we show that the setup can be used for the frequency characterization of ITO and AsGa nanolayers wich exhibit a frequency dependent behavior. The low frequency measurement are found in agreement with the classical four point probe setup.

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