The in-depth understanding of ions' generation and movement inside all-inorganic perovskite quantum dots (CsPbBr QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.
New efficient hole‐transport material (HTM) composites based on low‐cost easy‐preparation non‐peripheral octamethyl‐substituted copper (II) phthalocyanine (N‐CuMe2Pc) nanowire and poly(3‐hexylthiophene) (P3HT) are developed for CH3NH3PbI3 (MAPbI3)‐based perovskite solar cells (PSCs). Compared with pristine P3HT, the prepared nanocomposite HTMs provided thin films with better qualities and reduced trap densities, and exhibited higher hole mobilities and well‐matched energy levels with the perovskite layer. Depending on the ratio of the two components, the power conversion efficiency (PCE) reached up to 16.61%, which is higher than the efficiency of the standard device based on doped spiro‐OMeTAD (16.13%). Moreover, the long‐term stability of the PSCs is also improving greatly. The best performing devices based on P1C1 HTM retained 90% of their initial efficiencies after 800 h of storage with a relative humidity of 75%. These results indicate N‐CuMe2Pc nanowire/P3HT nanocomposites can be an effective HTM to realize superior performance in PSCs.
Inspired by the highly parallel processing power and low energy consumption of the biological nervous system, the development of a neuromorphic computing paradigm to mimic brain-like behaviors with electronic components based artificial synapses may play key roles to eliminate the von Neumann bottleneck. Random resistive access memory (RRAM) is suitable for artificial synapse due to its tunable bidirectional switching behavior. In this work, a biological spiking synapse is developed with solution processed Au@Ag core-shell nanoparticle (NP)-based RRAM. The device shows highly controllable bistable resistive switching behavior due to the favorable Ag ions migration and filament formation in the composite film, and the good charge trapping and transport property of Au@Ag NPs. Moreover, comprehensive synaptic functions of biosynapse including paired-pulse depression, paired-pulse facilitation, post-tetanic potentiation, spike-time-dependent plasticity, and the transformation from short-term plasticity to long-term plasticity are emulated. This work demonstrates that the solution processed bimetal core-shell nanoparticle-based biological spiking synapse provides great potential for the further creation of a neuromorphic computing system.
Soluble tetraalkyl-substituted copper phthalocyanines were employed as anodic buffer layers of OLEDs, achieving enhanced stability and durability compared with PEDOT:PSS.
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