Synergies of Electrochemical Metallization and Valance Change in All‐Inorganic Perovskite Quantum Dots for Resistive Switching

Abstract

The in-depth understanding of ions' generation and movement inside all-inorganic perovskite quantum dots (CsPbBr QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.

Self‐Assembly of Chiral Nematic Liquid Crystalline Phases of AgNR@SiO2@Cysteine@CsPbBr3 Hybrid Nanorods with Plasmon‐Dependent Photoluminescence

“…The all‐inorganic perovskite CsPbBr 3 QDs were synthesized by heating a mixture of Cs‐Oleate (1.6 mL), PbBr 2 (0.276 g), oleylamine (OLA, 2 mL), oleic acid (OA, 2 mL), and ODE (20 mL) under N 2 flow in an oil bath according to the previous report with some modification. [ 32 ] The transmission electron microscopy (TEM) image shows that the CsPbBr 3 QDs have a uniform cubic morphology with an average size of 15 nm (Figure S1a, Supporting Information). The CsPbBr 3 QDs are highly crystalline, confirmed by the high‐resolution transmission electron microscopy (HRTEM).…”

Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties

“…The usage of perovskites in data storage have attracted huge amounts of interests and a number of memory devices based on inorganic or hybrid organic–inorganic perovskites (HOIP) with superior electrical performances have been investigated. Especially, because of the intense light‐harvesting property as well as significant hysteresis, perovskite materials were widely utilized to fabricate photo‐responsive memory devices, including light tunable flash memory and ReRAM . For instance, Chen et al reported a flash memory based on CH 3 NH 3 PbBr 3 (MAPbBr 3 ) displaying multilevel memory behavior by applying light illumination .…”

Recent Advances in Memory Devices with Hybrid Materials

“…The set voltage was lowered to 0.1 V when the device was assisted with the white LED (power density: 3.20 mW cm −2 ). [64] The structure of the device was CsPbBr 3 quantum dots array layer sandwich between PMMA layer, and the top (Ag) and bottom (ITO) electrode was deposited. Photoassisted low voltage switching mechanism was demonstrated ( Figure 13e).…”

“…[46] This phenomena which is originated from defect migration can extend the applications of OIP materials to resistive switching memories and synaptic devices. [62][63][64] Most research about nonvolatile resistive switching memory is focused on selection of the active materials and on design of device structure. [62][63][64] Most research about nonvolatile resistive switching memory is focused on selection of the active materials and on design of device structure.…”