dielectrics for future stackedcapacitor DRAM Thin films of barium-strontium titanate (Ba,Sr)TiO 3 (BSTO) have been investigated for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This paper describes progress made in the preparation of BSTO films by liquid-source metal-organic chemical vapor deposition (LS-MOCVD) and the issues related to integrating films of BSTO into a DRAM capacitor. Films of BSTO deposited on planar Pt electrodes meet the electrical requirements needed for future DRAM. The specific capacitance and charge loss are found to be strongly dependent on the details of the BSTO deposition, the choice of the lower electrode structure, the microstructure of the BSTO, the post-electrode thermal treatments, BSTO dopants, and thin-film stress. Films of BSTO deposited on patterned Pt electrodes with a feature size of 0.2 m are found to have degraded properties compared to films on large planar structures, but functional bits have been achieved on a DRAM test site at 0.20-m ground rules. Mechanisms influencing specific capacitance and charge loss of BSTO films are described, as are the requirements for the electrode and barrier materials used in stacked-capacitor structures, with emphasis given to the properties of the Pt/TaSi(N) electrode/barrier system. Major problems requiring additional investigation are outlined.

The dielectric relaxation of Ba0.7Sr0.3TiO3 thin films was investigated up to K band (20 GHz) using time domain and frequency domain measurements. Our results show that from 1 mHz to 20 GHz, the dielectric relaxation of the complex capacitance of Ba0.7Sr0.3TiO3 thin films can be understood in terms of a power law dependence known as the Curie–von Schweidler law. The small dispersion (less than 7% decrease in capacitance from 1 mHz to 20 GHz) and low loss (loss angle less than 0.006 at 20 GHz) measured in Ba0.7Sr0.3TiO3 thin films indicate that these films are applicable to device application up to at least K band.

The discovery of luminescence in electrochemically etched porous silicon is an extremely important scientific breakthrough with enormous technological implications. It opens the door for silicon, the most important microelectronic material, as a possible material for optoelectronics applications. Our result, a correlation of Raman and photoluminescence spectra, shows that the observed luminescence is originated from extremely small microstructures. As the luminescent peak increases in photon energy, the Raman feature shifts to lower energy, remaining sharp, and eventually splits, developing into TO and LO modes. No peak at 480 cm−1 is observed, which indicates no substantial contribution from an amorphous region. These data provide strong evidence of the role of microstructures in porous silicon.

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Long non-coding RNAs (lncRNAs) have important roles in diverse biological processes, including transcriptional regulation, cell growth and tumorigenesis. The present study aimed to investigate whether lncRNA-growth arrest-specific (GAS)5 regulated bladder cancer progression via regulation of chemokine (C-C) ligand (CCL)1 expression. The viability of BLX bladder cancer cells was detected using a Cell Counting kit-8 assay, and cell apoptosis was assessed by annexin V-propidium iodide double-staining. The expression levels of specific genes and proteins were analyzed by reverse transcription-quantitative polymerase chain reaction and western blotting, respectively. In addition, cells were transfected with small interfering (si)RNAs or recombinant GAS5 in order to silence or overexpress GAS5, respectively. The results of the present study demonstrated that knockdown of GAS5 expression promoted bladder cancer cell proliferation, whereas overexpression of GAS5 suppressed cell proliferation. Furthermore, knockdown of GAS5 resulted in an increased percentage of cells in S and G2 phase, and a decreased percentage of cells in G1 phase. In addition, the present study performed a hierarchical cluster analysis of differentially expressed lncRNAs in bladder cancer cells and detected that CCL1 overexpression resulted in an upregulation of GAS5, which may improve the ability of cells to regulate a stress response in vitro. Furthermore, knockdown of GAS5 expression increased the mRNA and protein expression of CCL1 in bladder cancer cells. Gain-of-function and loss-of-function studies demonstrated that GAS5 was able to inhibit bladder cancer cell proliferation, at least in part, by suppressing the expression of CCL1. The results of the present study demonstrated that GAS5 was able to suppress bladder cancer cell proliferation, at least partially, by suppressing the expression of CCL1. The results of the present study may provide a basis for developing novel effective treatment strategies against bladder cancer.

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The internal friction of partially Sr-substituted Y(Ba 1−x Sr x ) 2 Cu 3 O 7−δ (Y123) ceramics was measured by the vibrating-reed method from liquid nitrogen temperature to room temperature at kilohertz frequencies. The intensity of the internal friction peak, which appears around 220 K, decreases upon Sr doping while the peak position shows no systematic change. Our results do not support the previous oxygen order-disorder explanation; we present another approach relating this peak to the crossover in charge-carrier dynamics, and its evolution with Sr doping is discussed in terms of release of internal strain and electron-phonon coupling.