We present results on high-speed GaAs p-i-n photodiodes grown on Si substrates by molecular beam epitaxy. In addition to the dc operating characteristics, we also report the first impulse response and microwave frequency response measurements of GaAs-on-Si photodiodes. Results include an impulse response pulse width of 45 ps and a modulation corner frequency >4 GHz at a reverse bias of −3 V.
We report on the frequency response of quantum well lasers on Si substrates grown by molecular beam epitaxy. Ridge waveguide lasers of 10 μm×380 μm having threshold currents as low as 40 mA were used in this study. Measurements were performed up to a frequency of 4.5 GHz with a resultant modulation corner frequency of 2.5 GHz when the laser was operated about 20% above the threshold.
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