The second-order nonlinear optical coefficients d33, d31, and d15 of GaN:Mg epitaxial film were studied by the standard Maker fringe of an anisotropic medium. The measured d33=−(16.5±1.3) pm/V which is 55 times of the d11 of quartz. The measured ratios of d33/d31 and d31/d15 showed that the crystalline film is close to an ideal wurzite structure. The refractive indices and the dispersive curves of ne, n0 were also determined by TM and TE waveguide mode measurements.
Waveguide TE and TM modes in a GaN:Mg epitaxial crystalline film were studied in a wide spectral range (457.9-1053 nm). The refractive indices n(e) and n(o) were accurately determined by TM and TE mode measurements at six different wavelengths (457.9, 514.5, 632.8, 724.3, 855.1, and 1053 nm). Dispersive curves of n(e) versus lambda and no versus lambda were obtained. It was found that bireferingence slightly increases (n(e) - n(o) = 0.033-0.038) from 1053 to 457.9 nm.
We report successful deposition of epitaxial nonlinear KTa0.52Nb0.48O3 (KTN) films on (100) GaAs substrates. A buffer layer scheme consisting of epitaxial MgO and SrTiO3 buffer layers and a Si3Ni4 encapsulation of the substrate was developed to alleviate chemical and structural incompatibilities between the GaAs substrate and KTN film at the growth temperature (∼750 °C). The structure, composition, and preliminary optical properties of the KTN films were evaluated by four-circle x-ray diffraction, Rutherford backscattering spectrometry, and prism coupled optical waveguide mode measurements, respectively. We observed sharp and distinguishable transverse electric and transverse magnetic propagating modes in the KTN films, and measured the refractive index (n0) of the film at 488 nm to be 2.275 which is close to the bulk value of 2.35, all of which indicates a high structural and optical film quality.
The second-order nonlinear optical coefficients d(33) , d(31) , and d(15) of KTa(0.52) Nb(0.48) O(3) epitaxial thin films grown upon MgO were studied by the standard Maker fringe method of an anisotropic medium. The measured d(33)=-84pm/V is 2.8 times the d(33) of LiNbO(3). The refractive indices n(e) and n(o) at several wavelengths were determined by TE and TM waveguide mode measurements. The data presented here point out the excellent qualities of KTa(1-x) Nb(x)O (3) films for use in integrated optics applications.
Nonlinear optical films on GaAs and other III-V (AlGaAs, InGaAs) semiconducting substrates have many potential applications in integrated optics. Until now, the growth of device quality films on GaAs was a major technological challenge. Using Pulsed Laser Deposition (PLD) epitaxial films of prototypical nonlinear KTa0.52Nb0.48O3 (KTN) were successfully deposited on single crystalline GaAs substrates for the first time. In order to alleviate chemical and structural incompatibilities between the GaAs substrate and KTN film at the growth temperature (∼750°C), a novel buffer layer scheme consisting of epitaxial MgO and SrTiO3 buffer layers and a Si3Ni4 encapsulation of the substrate was successfully developed. To obtain films with the required stoichiometry, a segmented target geometry was used consisting of KTN and KNO3 targets. The high crystalline quality of KTN films on GaAs was established by detailed 4-circle x-ray diffraction studies. Rutherford Backscattering studies confirmed the composition of the films. Optical measurements have been carried out on epitaxial KTN films on GaAs. Using an Ar+ laser (457.9 nm) operating in the TEM00 mode, we have observed sharp and distinguishable TE and TM propagating modes in KTN films. The refractive index (n0) of the film at 488 nm is 2.275 which is close to the bulk value of 2.35.
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