Waveguide study and refractive indices of GaN:Mg epitaxial film

Zhang, H. Y.; He, X. H.; Shih, Yanhua; Schurman, M.; Feng, Zhe Chuan; Stall, R. A.

doi:10.1364/ol.21.001529

Cited by 21 publications

(12 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Excellent SHG power can be observed at 0 incident angle using the 80× objective in the 2.5 µm thick GaN sample. Another advantage of using longer IR wavelength to perform the SHG image in GaN is the increase of the SHG coherent length due to lower refractive index dispersion in the longer wavelength region (Kawashima et al 1997, Yu et al 1997, Zhang et al 1996. The calculated coherent length of the SHG process using the 1230 nm IR wavelength is approximately 10 µm, which is much longer than our sample thickness and ensures efficient SHG process in our experimental arrangement.…”

Section: Bulk Gan Samplementioning

confidence: 78%

Mapping piezoelectric‐field distribution in gallium nitride with scanning second‐harmonic generation microscopy

et al. 2001

View full text Add to dashboard Cite

Summary: Taking advantage of the electric field-enhanced second-harmonic generation effect in bulk gallium nitride (GaN) and indium gallium nitride (InGaN) quantum wells, we demonstrated the piezoelectric field distribution mapping in bulk GaN and InGaN multiple-quantum-well (MQW) samples using scanning second-harmonic generation (SHG) microscopy. Scanning SHG microscopy and the accompanying third-harmonic generation (THG) microscopy of the bulk GaN sample were demonstrated using a femtosecond Cr:forsterite laser at a wavelength of 1230 nm. Taking advantage of the off-resonant electric field-enhanced SHG effect and the bandtail state-resonance THG effect, the second-and third-harmonic generation microscopic images obtained revealed the piezoelectric field and bandtail state distributions in a GaN sample. Combined with 720 nm wavelength excited twophoton fluorescence microscopy in the same sample, the increased defect density around the defect area was found to suppress bandedge photoluminescence, to increase yellow luminescence, to increase bandtail state density, and to decrease residue piezoelectric field intensity. Scanning SHG microscopy of the InGaN MQW sample was resonant excited with 800 nm femtosecond pulses from a Ti:sapphire laser in order to suppress SHG contribution from the bulk GaN substrate. Taking advantage of the strong piezoelectric field inside the InGaN quantum well, the wavelength resonant effect, and the electric field-enhanced SHG effect of InGaN quantum wells, resonant scanning SHG microscopy revealed the piezoelectric field distribution inside the wells. Combined with accompanying three-photon fluorescence microscopy from the bulk GaN substrate underneath the quantum wells, the direct correspondence between the piezoelectric field strength inside the quantum well and the substrate quality can be obtained. According to our study, the GaN substrate area with bright bandedge luminescence corresponds to the area with strong SHG signals indicating a higher stained-induced piezoelectric field. These scanning harmonic generation microscopies exhibit superior images of the piezoelectric field and defect state distributions in GaN and InGaN MQWs not available before. Combining with scanning multiphoton fluorescence microscopy, these techniques open new ways for the physical property study of this important material system and can provide interesting details that are not readily available by other microscopic techniques.

show abstract

Section: Bulk Gan Samplementioning

confidence: 78%

Mapping piezoelectric‐field distribution in gallium nitride with scanning second‐harmonic generation microscopy

et al. 2001

View full text Add to dashboard Cite

show abstract

“…18.7 show the spectral loss α tot − α mirr measured by the Hakki-Paoli method. These numbers are in the range of the values reported in the literature [10,11]. In the figure, the mirror loss α mirr = 15 cm −1 has been subtracted already, so that the internal optical losses are visible exclusively.…”

Section: Optical Waveguide Lossmentioning

confidence: 75%

Optical Properties of Edge‐Emitting Lasers: Measurement and Simulation

Schwarz

Witzigmann

2007

Nitride Semiconductor Devices: Principles and Simulation

View full text Add to dashboard Cite

“…20,21) As a result of the enhanced optical confinement factor (À), using quaternary InAlGaN is found to provide better laser performance than the conventional Al 0:2 Ga 0:8 N electronic blocking layer. The À values of InAlGaN are increased according to the higher refractive index of InN and the optical wave intensity near the p-type active region is enhanced.…”

mentioning

confidence: 99%

Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer

Chang

Luo

Kuo

et al. 2005

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Laser performance of an InGaN edge-emitting laser using a quaternary InAlGaN electronic blocking layer is investigated. Varying the aluminum (Al) composition in InAlGaN with a fixed indium (In) value (Al:In=5:1) indicates that a lower threshold current and higher characteristic temperature (T 0) value can be obtained when the Al composition is higher than 20%. When Al=25%, the threshold current is reduced at the expense of a decreased T 0 value from 149 to 130 K when the In composition increases from 1 to 7% in a temperature range of 300–370 K. The decreased T 0 value is mainly attributed to the increase in electronic leakage current.

show abstract

Waveguide study and refractive indices of GaN:Mg epitaxial film

Cited by 21 publications

References 8 publications

Mapping piezoelectric‐field distribution in gallium nitride with scanning second‐harmonic generation microscopy

Mapping piezoelectric‐field distribution in gallium nitride with scanning second‐harmonic generation microscopy

Optical Properties of Edge‐Emitting Lasers: Measurement and Simulation

Simulation of InGaN Quantum Well Laser Performance Using Quaternary InAlGaN Alloy as Electronic Blocking Layer

Contact Info

Product

Resources

About