In this paper, the effect of proton and He particle bombardment in CsPbBr3 material was investigated by the Monte Carlo simulation including ion range, backscattering, vacancies and sputtering yield. The energies of proton and He particle varied from 50 keV to 180 keV and the particle incidence angles increased from 0o to 89.9o . The calculated results showed that with the increase of incidence energies, the range and vacancies increased, and the backscattering ions and sputtering yield reduced for proton and He particle. Meanwhile, the vacancies, backscattering ions and sputtering yield induced by He particle were much more proton at the same energy. With the increase of incidence angles, the range and vacancies were reduced, and the sputtering yield increased for proton and He particle. Also, it is obvious that the effects of He particle on CsPbBr3 material were much more serious than proton.
The double InGaAs/InAs channel structure is designed to improve DC and RF characteristics of InP-based HEMT, which is studied by the numerical simulation. The saturated channel current, transconductance, subthreshold slope, drain induced barrier lowering, and frequency characteristics are analyzed. A comparison is done between the device with the double InGaAs/InAs channel and InGaAs channel. By using double InGaAs/InAs channel, maximum transconductance of 1019.7 mS/mm is achieved, and the lower value of subthreshold slope and drain induced barrier lowering is also obtained. The excellent performance of device with double InGaAs/InAs channel structure is mainly due to the enhanced confinement of the electrons in the channel region. In addition, the maximum oscillation frequency of 758.7 GHz is obtained with the double InGaAs/InAs channel structure.These results indicate that InP-based HEMT with double InGaAs/InAs channel structure is a promising candidate for high frequency application.
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