Changes in the electrical sheet resistance and optical density of copper-sulfide (Cu x S) films have been measured as functions of thermal aging in air. It was found that sheet resistance (or bulk resistivity) and optical density (or absorption coefficient) both initially increase with aging, and subsequently decrease. Maximum bulk resistivity and absorption coefficient values, corresponding to the chalcocite phase of CuxS, were found to be about 0.1 !lcm and 5X 10 4 cm-I (at 1.8 eV photon energy), respectively. CdS/CuxS solarcell short-circuit current and efficiency were monitored as functions of thermal aging time, degradation being directly related to CU x S sheet resistance. The dependence of sheet resistance on CU x S stoichiometry is discussed. Several possible mechanisms are proposed to account for the observed behavior.
A new vacuum IR cell which is operable at 550 °C and 10"® torr for extended periods and devoid of contamination by organic vapor has been developed. The cell uses commerlcal vacuum adaptors as the IR window holders, which may be easily disassembled for sample introduction into the cell. The cell Is compact, and no metal part is exposed to the internal gas stream. A basic design of the cell, procedures of the experiments, and some initial results to verify the cell performance are presented,
The Rutherford backscattering technique using 1-MeV protons has been employed to analyze pure and doped lead azide thin films of various thicknessess which had been prepared by vacuum evaporation followed by vapor conversion. The films were found to be approximately homogeneous in composition with depth within the limits of the depth resolution of the experiment. The energy rate loss dE/dx of the films was found to be about 60 keV/μm. The Tl-doped films showed a somewhat different backscattering spectrum from the undoped films.
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